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On Mechanism Of Nickel Diffusion During Metal Induced Lateral Crystallization Of Amorphous Silicon

Published online by Cambridge University Press:  01 February 2011

A.M. Myasnikov ,
M.C. Poon ,
P.C. Chan ,
K.L. Ng ,
M.S. Chan ,
W.Y. Chan ,
S. Singla  and
C.Y. Yuen
A.M. Myasnikov
Affiliation:
Institute of Semiconductors Physics, Novosibirsk, Russia Hong Kong University of Science and Technology, Hong Kong
M.C. Poon
Affiliation:
Hong Kong University of Science and Technology, Hong Kong
P.C. Chan
Affiliation:
Hong Kong University of Science and Technology, Hong Kong
K.L. Ng
Affiliation:
Hong Kong University of Science and Technology, Hong Kong
M.S. Chan
Affiliation:
Hong Kong University of Science and Technology, Hong Kong
W.Y. Chan
Affiliation:
Hong Kong University of Science and Technology, Hong Kong
S. Singla
Affiliation:
Hong Kong University of Science and Technology, Hong Kong
C.Y. Yuen
Affiliation:
Hong Kong University of Science and Technology, Hong Kong
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Abstract

During metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) the size and quality of obtained film depend on nickel penetration and it is very important to know about nickel diffusion at recrystallization process. The nickel has penetrated during annealing on surface of a-Si inducing the recrystallization process, which has changed the mechanism of diffusion on surface of a-Si to the mechanism of diffusion on surface of single crystal silicon and in single crystal silicon. Also the effect of thickness of nickel and a-Si film are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A22.11
Copyright
Copyright © Materials Research Society 2002

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