Article contents
OMVPE Growth of ZnSe Utilizing Zinc Amides as Source Compounds: Relevance to the Production of p-Type Material
Published online by Cambridge University Press: 25 February 2011
Abstract
Growth of ZnSe on GaAs from H2S9 and Zn[N(TMS)2]2 precursors has been demonstrated. When Et2Zn is used as the zinc precursor a higher quality deposit is obtained. Results of experiments employing Et2Zn as the main zinc source with Zn[N(TMS)2]2 introduced at a dopant level indicate nitrogen has been incorporated. Final thin films were characterized by PL, XRD, SIMS, and Raman.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1992
References
REFERENCES AND FOOTNOTES
- 4
- Cited by