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Omnidirectional reflectance and optical gap properties of Si/SiO2 Thue-Morse quasicrystals

  • L. Dal Negro (a1), M. Stolfi (a1) (a2), Y. Yi (a1), J. Michel (a1), X. Duan (a1), L.C. Kimerling (a1), J. Leblanc (a2) and J. Haavisto (a2)...

Abstract

Aperiodic one dimensional Si/SiO2 Thue-Morse (T-M) multilayer structures have been fabricated, for the first time, in order to investigate both the band-gap behavior, with respect to the system size (band-gap scaling), and the omnidirectional reflectance of the fundamental optical band-gap. Variable angle reflectance data have experimentally demonstrated a large reflectance band-gap in the optical spectrum of a T-M quasicrystal, in agreement with transfer matrix simulations. We have explained the physical origin of the T-M omnidirectional band-gap as a result of periodic spatial correlations in the self-similar T-M structure, as revealed by Fourier Transform and Wavelet analysis. The unprecedented degree of structural flexibility showed by T-M systems can provide an attractive alternative to photonic crystals for the fabrication of photonic devices.

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Omnidirectional reflectance and optical gap properties of Si/SiO2 Thue-Morse quasicrystals

  • L. Dal Negro (a1), M. Stolfi (a1) (a2), Y. Yi (a1), J. Michel (a1), X. Duan (a1), L.C. Kimerling (a1), J. Leblanc (a2) and J. Haavisto (a2)...

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