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Ohmic Contacts To p+-GaAs and Al0.26Ga0.74As

Published online by Cambridge University Press:  25 February 2011

W. Y. Han ,
M. W. Cole ,
L. M. Casas ,
A. DeAnni ,
M. Wade ,
K. A. Jones ,
A. Lapore ,
Y. Lu  and
L. W. Yang
W. Y. Han
Affiliation:
Army Research Laboratory, Fort Monmouth, New Jersey 07703-0500
M. W. Cole
Affiliation:
Army Research Laboratory, Fort Monmouth, New Jersey 07703-0500
L. M. Casas
Affiliation:
Army Research Laboratory, Fort Monmouth, New Jersey 07703-0500
A. DeAnni
Affiliation:
Army Research Laboratory, Fort Monmouth, New Jersey 07703-0500
M. Wade
Affiliation:
Army Research Laboratory, Fort Monmouth, New Jersey 07703-0500
K. A. Jones
Affiliation:
Army Research Laboratory, Fort Monmouth, New Jersey 07703-0500
A. Lapore
Affiliation:
Army Research Laboratory, Fort Monmouth, New Jersey 07703-0500
Y. Lu
Affiliation:
Department of Electrical and Computer Engineering, Rutgers University, Piscataway, New Jersey 08855-0909
L. W. Yang
Affiliation:
Ford Microelectronics, Inc., 9965 Federal Drive, Colorado Spring, Colorado 80921 Currently with Martin Marietta Electronics Laboratory, Electronics Parkway, EP-3, Syracuse, NY 13221.
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Abstract

Ohmic contacts, with metallization scheme of Pd/Ge/Ti/Pt, were formed on heavily carbon doped GaAs and AlxGa1-xAs. The lowest specific contact resistances were 4.7x10-7 and 8.9x 10-6 Ω-cm2 for the p+-GaAs and Al0.26Ga0.74As. The p+-GaAs and Al0.26Ga0.74As were doped with carbon to 5x1019 and 2x1019 cm-3 respectively. Interfacial reactions and elemental diffusion of the contacts were investigated via transmission electron microscopy and Auger electron spectrometry with depth profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 301
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Braslau, N., Staples, J. L., Solid-State Electron, 10), 38 ( 1967).CrossRefGoogle Scholar
2 Sands, T. and Wada, O., Jpn, J. Appl. Phys., 19L, 491 (1980).Google Scholar
3 Reemtsma, J. H. and Heime, K., Super Lattice and Microstructures, 4, 197 (1988).Google Scholar
4 Gopen, H. J. and Yu, A. Y. C., Solid-State Electron 14, 515 (1971).Google Scholar
5 Zheng, L. R., Lawrence, D. J., and Blanton, T. N., J. Mater. Res. 8, 1045 (1993).CrossRefGoogle Scholar
6 Han, W. H., Lu, Y., Lee, H. S., Cole, M. W., Casas, L. M., DeAnni, A., Wade, M., Jones, K. A., Yang, L. W., J. Appl. Phys. 74, 754 (1993).Google Scholar
7 Marshall, E. D., Yu, L.S., Lau, S. S., Appl. Phys. Lett., 54, 721 (1989).Google Scholar
8 Cole, M.W., Han, W.H., Casas, L.M., Eckart, D.W. and Jones, K.A., to be published in JVST (1994).Google Scholar
9 Yih-Cheng, Shih, Masanore, Murakami, Wilkie, E.L. and Callegari, A.C., J. Appl. Phys. 62, 582 (1987).Google Scholar
10 Liliental-Webber, Z., Washburn, J., Newman, N., Spicer, W.E. and Weber, E.R., Appl. Phys. Lett. 49, 1514 (1986).Google Scholar
11 Taeil, Kim, Ghung, D.D.L. and Mahajan, S., Mat Res. Soc. Symp. Proc., 77, 369 (1987).Google Scholar