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Ohmic Contacts To p+-GaAs and Al0.26Ga0.74As

  • W. Y. Han (a1), M. W. Cole (a1), L. M. Casas (a1), A. DeAnni (a1), M. Wade (a1), K. A. Jones (a1), A. Lapore (a1), Y. Lu (a2) and L. W. Yang (a3) (a4)...

Abstract

Ohmic contacts, with metallization scheme of Pd/Ge/Ti/Pt, were formed on heavily carbon doped GaAs and AlxGa1-xAs. The lowest specific contact resistances were 4.7x10-7 and 8.9x 10-6 Ω-cm2 for the p+-GaAs and Al0.26Ga0.74As. The p+-GaAs and Al0.26Ga0.74As were doped with carbon to 5x1019 and 2x1019 cm-3 respectively. Interfacial reactions and elemental diffusion of the contacts were investigated via transmission electron microscopy and Auger electron spectrometry with depth profiles.

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