Skip to main content Accessibility help

Ohmic Contacts on N-Type Hg0.4Cd0.6Te.

  • Patrick W. Leech (a1), Geoffrey K. Reeves (a2) and Martyn H. Kibel (a1)


The electrical characteristics of In, Sn, Au and Pt contacts on n-type Hg0.4Cd0.6Te formed in the presence and absence of prior In2+ implantation have been examined. Measurements of specific contact resistance made using a Transmission Line Model have shown that the unimtlanted In/Hg0.4Cd0.6 and Sn/Hg0.4Cd0.6 junctions gave values of pc = 3.0x10−3 to 4.0x10−3 ohm.cm2. Auger sputter profiles of the asdeposited In/Hg0.4Cd0.6 and Sn/Hg0.4Cd0.6 interfaces have shown a significant in-diffusion of the metal overlayer. The influence of shallow In2+ implantation prior to metallization was an increase in pc which occurred above a dose of 1013 ions/cm2. In contrast, Pt and Au formed Schottky barrier diodes on n-type Hg0.4Cd0.6 with øb=0.69eV for Pt and øb=0.79eV for Au. With prior In2+ implantation, both Pt and Au contacts exhibited an ohmic behaviour with pc= 2x10−1 ohm.cm2. These results have significance in the fabrication of devices for 1.0 -2.5μm optical communications.



Hide All
1. Orsal, B., Alabedra, R., Valenza, M., LeCoy, G.P., Meslage, J. and Boisrobert, C.Y., IEEE Trans. Electron Devices, E (1988), 101.
2 Thompson, J., Mackett, P., Jenkin, G.T., Duy, T. Nguyen and Gori, P., J. Crystal Growth, 86, (1988), 917.
3. Spicer, W.E., Friedman, D.J. and Carey, G.P., J.Vac.Sci. Technol., A6, (1988), 2746.
4. Leech, P.W., J. Appl. Phys., 68 (2), (1990), 1174.
5. Spicer, W.E., J.Vac.Sci.Technol., A8 (2), (1990), 1174.
6. Shannon, J.M., Solid State Electronics, 19, (1976), 537.
7. Han, C.C., Marshall, E.D., Fang, F., Wang, L.C., Lau, S.S. and Voreades, D., J. Vac. Sci. Technol. B6 (6), (1988), 1662.
8. Pain, G., Bharatula, N., Elms, T.J., Gwynn, P., Kibel, M., Kwietniak, M.S., Leech, P., Petkovic, N., Sandford, C., Thompson, J., Warminiski, T., Gao, D., Glanvill, S.R., Rossouw, C.J., Stevenson, A.W., Wilkins, S.W. and Wielunski, L., J. Vac. Sci. Technol., A8 (2), (1990), 1067.
9. Leech, P.W., Gwynn, P.J. and Kibel, M.H., App. Surf. Sci., 37, (1989), 291.
10. Reeves, G.K. and Harrison, H.B., IEEE Electron Device Lett. EDL 3 (1982), 111.
11. Johnson, E.S. and Schmitt, J.T., J. Electronic Mats., 6 (1), (1977), 25.
12. Popovic, R.S., Solid State Electronics, 21, (1978) 1133.
13. Brice, J. and Capper, P. (eds.), Properties of Mercury Cadmium Telluride, EMIS Datareviews Series No.3, The Institution of Electrical Engineers, London, (1987), Chap. 2.1, Chap. 3.2.
14. Margalit, S. and Nemirovsky, Y., J. Electrochem. Soc., 127 (6), (1980), 1406.
15. Vydyanath, H.R., J. Electrochem. Soc., 128 (12), (1981), 2619.
16. Uzan-Saquy, C., Comedi, D., Richter, V., Kalish, R. and Triboulet, R., J.Vac.Sci. Technol., A7 (4), (1989), 2575.


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed