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Ohmic Contact Metallization for n-Type GaAs
Published online by Cambridge University Press: 25 February 2011
Abstract
The performance of GaAs devices is significantly influenced by the qualities of the substrates, Schottky and Ohmic contact materials. Development of Ohmic contact materials is far behind compared with that of the other materials. Low resistance, alloyed AuGeNi Ohmic contacts have been extensively used in the current manufacturing GaAs devices. However, extension of usage of these devices to Very Large Scale Integration levels requires the contacts with excellent thermal stability, shallow diffusion depth, and smooth contact surface in addition to low contact resistance. In the present paper recent studies for development of Ohmic contacts which improve the poor contact properties of the alloyed Ohmic contacts are reviewed.
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- Copyright © Materials Research Society 1994