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ODMR of Shallow Donors in Zn-Doped Lec-Grown InP

Published online by Cambridge University Press:  25 February 2011

J. M. Trombetta  and
T. A. Kennedy
J. M. Trombetta
Affiliation:
Naval Research Laboratory, Washington, DC 20375
T. A. Kennedy
Affiliation:
Naval Research Laboratory, Washington, DC 20375
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Abstract

ODMR spectra observed while monitoring the shallow donor-shallow acceptor pair emission in Zn-doped LEC-grown InP display strong features in the region near the conduction electron value of g=1.20. In addition to a previously observed narrow line, we observe a much broader resonance which dominates at low photoexcitation intensity. This broader line is interpreted as the unresolved exchange split resonances of electrons bound to residual shallow donors. The exchange broadening arises from interactions with nearby paramagnetic centers. Both resonances result in a decrease in the shallow-donor-to-shallow-acceptor radiative recombination and give evidence for pair recombination processes which compete with this emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 33
Copyright
Copyright © Materials Research Society 1990

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