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The occupancy of the threading dislocation lines within n-type gallium nitride: Recent progress

  • Erfan Baghani (a1) and Stephen K. O’Leary (a1)

Abstract

Within the framework of a grand partition function formalism, we examine the occupancy of the dangling bond dislocation defect sites and the VGa-ON dislocation defect sites within uncompensated n-type gallium nitride. The sensitivity of these results to variations in the unoccupied dislocation defect energy level is examined. We find that the VGa-ON dislocation defect sites’ greater capacity to store charge plays a large role in influencing the results, i.e., greater free electron and bulk donor concentrations are required in order to fully saturate the threading dislocation lines with charge.

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Keywords

The occupancy of the threading dislocation lines within n-type gallium nitride: Recent progress

  • Erfan Baghani (a1) and Stephen K. O’Leary (a1)

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