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Observations of Damage and Transport of Hydrogen in Ion Bombarded Polycrystalline Silicon
Published online by Cambridge University Press: 21 February 2011
Abstract
A combination of chemical etching and sheet resistivity measurements showed that intense (1.4 mA/cm2 ) low energy (1400 eV) ion beam hydrogenation of polycrystalline silicon having a columnar structure can produce electrical defect passivation to depths in the order of 100 μm. Transmission electron micrographs disclose surface and near-surface features resulting from the ion beam bombardment which suggest that one of the hydrogen transport mechanisms may be defect induced.
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- Copyright © Materials Research Society 1984
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