Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-24T19:39:16.086Z Has data issue: false hasContentIssue false
  • English
  • Français

Observation of Melting in 30 ÅDiameter CdS Nanocrystals

Published online by Cambridge University Press:  28 February 2011

A. N. Goldstein ,
V. L. Colvin  and
A. P. Alivisatos
A. N. Goldstein
Affiliation:
Department of Chemistry, University of California, Berkeley, Berkeley, CA. 94720
V. L. Colvin
Affiliation:
Department of Chemistry, University of California, Berkeley, Berkeley, CA. 94720
A. P. Alivisatos
Affiliation:
Department of Chemistry, University of California, Berkeley, Berkeley, CA. 94720
Get access

Abstract

Temperature dependent electron diffraction studies on 30 Å diameter CdS nanocrystals are described. The linear thermal expansion coefficient of the nanocrystals is 2.75 * 10−5 Å/K,and the melting point is 575 K. These data are in contrast to bulk CdS which has a melting point of 1750 K and a linear expansion coefficient of 5.5 * 10−6Å/K. The observed depression in the melting point of these semiconductor clusters is similar to effects observed in metals and molecular crystals, indicating that the phenomenon of reduced melting point in small systems is a general one regardless of the type of material. The observation of melting point depression in these clusters also has far reaching implications for the preparation of highly crystalline clusters of CdS, as well as for the use of these nanocrystals as precursors to thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 206: Symposium G – Clusters and Cluster-Assembled Materials , 1990 , 271
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Buffat, Ph. and Borel, J.-P., Phys. Rev. A 13 2287 (1976).CrossRefGoogle Scholar
2. Hahn, M. Y. and Whetten, R. L., Phys. Rev. Lett 61 1190 (1988).Google Scholar
3. Sheng, P., Cohen, R. W., and Schrieffer, J. R., J. Phys, C 14 L565 (1981).Google Scholar
4. Berry, R. S., Jellinek, J., and Natanson, G., Phys. Rev. A 30, 919 (1984).Google Scholar
5. Honeycutt, J. D. and Andersen, H. C., J. Phys. Chem. 91 4950 (1987).Google Scholar
6. Steigerwald, M. L. et. al. J. Am. Chem. Soc. 110 3046 (1988).Google Scholar
7. Olshavsky, M. A., Goldstein, A. N., and Alivisatos, A. P., “Organometallic Synthesis of GaAs Crystallites Exhibiting Quantum Confinement,” J. Am. Chem. Soc, in press.Google Scholar