Skip to main content Accessibility help
×
Home

Observation of Dopant Profile of Transistors Using Scanning Nonlinear Dielectric Microscopy

  • Koichiro Honda (a1) and Yasuo Cho (a2)

Abstract

We have demonstrated that scanning nonlinear dielectric microscopy (SNDM) exhibited high performance and high resolution in observing the dopant concentration profile of transistors. In this study, good quantitative agreement between the SNDM signals and dopant density values obtained by SIMS in standard Si samples, which dopant concentrations have been calibrated. We succeeded in visualizing high-resolution dopant profiles in n- and p-type MOSFET with 40 nm gate channels. It is considered that SNDM would be an effective method in measuring the quantitative two-dimensional dopant profiles of transistors. Finally, we have succeeded in detecting the dopant profiles of SRAM memory cell transistors.

Copyright

References

Hide All
[1] Zavyalov, V V, McMurray, J S, and Williams, C C, J. Appl. Phys. 85 (1999) 7774 10.1063/1.370584
[2] Wolf, P De, Clarysse, T, Vandervorst, W, Hellemans, L, Niedermann, Ph, and Haenni, W, J. Vac. Sci.Technol. B16 (1998) 401 10.1116/1.589817
[3] Volkl, E and Lehmann, M, Introduction to Electron Holography, ed. Volkl, E, Joy, D, and. Allard, L A (1999 New York: Plenum)10.1007/978-1-4615-4817-1
[4] Cho, Y, Kirihara, A, and Saeki, T, Rev. Sci. Instrument. 67 (1996) 2297 10.1063/1.1146936
[5] Cho, Y, Kazuta, S, and Matsuura, K, Appl. Phys. Lett., 75 (1999) 2833 10.1063/1.125165
[6] Odagawa, H, and Cho, Y, Funakubo, H, and Nagashima, K, Japan. J. Appl. Phys. 39, (2000) 3808 10.1143/JJAP.39.3808
[7] Cho, Y, Fujimoto, K, Hiranaga, Y, Wagatsuma, Y, Onoe, A, Terabe, K, and Kitamura, K, Appl. Phys. Lett. 81 (2002) 4401 10.1063/1.1526916
[8] Hirose, R, Ohara, K and Cho, Y, Nanotechnology, 18 (2007) S185 10.1088/0957-4484/18/8/084014
[9] Honda, K and Cho, Y, Appl. Phys. Lett. 86 (2005) 013501 10.1063/1.1846147
[10] Honda, K, Hashimoto, S and Cho, Y, Nanotechnology 17 (2006) 084014 10.1088/0957-4484/17/7/S14
[11] Ishikawa, K, Honda, K and Cho, Y, Nanotechnology, 18 (2007) 084015Begin typing text here.10.1088/0957-4484/18/8/084015

Keywords

Observation of Dopant Profile of Transistors Using Scanning Nonlinear Dielectric Microscopy

  • Koichiro Honda (a1) and Yasuo Cho (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed