1H NMR studies of hydrogenated amorphous silicon (a-Si:H) with ˜1017 cm-3 defects grown by PECVD with a rate of 5 Å/s show the existence of a hydrogen doublet for both asgrown and light-soaked samples. We observe the doublet over the temperature range from 5 to 20 K in a sample where no light soaking has occurred. The doublet line shapes display no narrowing over this temperature range. Vibrational modes characteristic of SiH2 wagging and scissor modes are seen from infrared spectroscopy. These results suggest that the doublet is due to SiH2 that occurs at a density of approximately 1 at. % in this sample. From line shape analysis, we estimate a lower limit of 1.8 ˜ for the hydrogen-to-hydrogen separation.