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Numerical Simulation of Zone-Melting Recrystallization of Thin Silicon Films With A Tungsten Halogen Lamp

Published online by Cambridge University Press:  28 February 2011

Richard D. Robinson  and
Ioannis N. Miaoulis
Richard D. Robinson
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, MA 02155
Ioannis N. Miaoulis
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, MA 02155
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Abstract

A two dimensional numerical simulation of incandescent lamp Zone-Melting Recrystallization (ZMR) was performed. A parametric study examined the thermal effects of lamp intensity, susceptor temperature, and ambient reflectivity, on the melt zone. The melt zone was found to vary linearly with lamp intensity and parabolically with susceptor temperature and ambient reflectivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 165
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Grigoropoulos, C. P., Buckholz, R. H., and Domoto, G. A., “The Role of Reflectivity Change in Optically Induced Recrystallization of Thin Silicon Films,” J. Appl. Phys. 59, 2 (1986) p. 454 Google Scholar
2. Pfeiffer, L., Gelman, A. E., Jackson, K. A., West, K. W., and Batstone, J. L., “Subboundary-free Zone-melt Recrystallization of Thin-film Silicon,” Appl. Phys. Lett. 51, 16 (1987) p. 1256 CrossRefGoogle Scholar
3. Chen, C. K., Geis, M. W., Tsaur, B-Y., Chapman, R. L., and Fan, J. C. C., “Topographic Imperfections in Zone Melting Recrystallized Si Films on SiO2 ,” J. Electrochem. Soc. 131, 7 (1984) p. 1707 CrossRefGoogle Scholar
4. Miaoulis, I. N., Wong, P. Y., Lipman, J. D., and Im, J. S., “Thermal Modeling of Zone-Melting-Recrystallization Processing of Silicon-On-Insulator Film Structures,” J. Appl. Phys. 69, 10 (1991) p. 7273 Google Scholar
5. Pfeiffer, L., Gelman, A. E., Jackson, K. A., and West, K. W., “Growth Mechanisms During Thin Film Crystallization from the Melt,” Mat. Res. Soc. Proc., 74, (1987) p. 543 Google Scholar
6. Mertens, P. W., Thesis, Interuniversitair Micro-Elektronica Centrum, Belgium, 1991 Google Scholar
7. Cline, H.E., “Silicon Thin Films Formed on an Insulator by Recrystallization,” J. Appl. Phys. 55, 8 (1984) p. 2910 Google Scholar
8. Stultz, T. J. and Gibbons, J. F., “Arc Lamp Zone Melting and Recrystallization of Si Films on Oxidized Silicon,” Appl. Phys. Lett. 41, 9 (1982) p. 824 Google Scholar
9. Vu, D. P., Haond, M., Bensahel, D., Dupuy, M., “Halogen Lamp Recrystallization of Silicon on Insulating Substrates,” J. Appl. Phys. 54, 1 (1983) p. 437 Google Scholar
10. Lipman, J. D., Thesis, Tufts UniversityGoogle Scholar
11. Patankar, S. V., Numerical Heat Transfer and Fluid Flow (McGraw-Hill, New York, 1980)Google Scholar