Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-25T17:35:27.396Z Has data issue: false hasContentIssue false

Numerical Modeling of Energy-Beam Induced Localized Melting of Thin SI Films

Published online by Cambridge University Press:  25 February 2011

J.S. Im
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108. Current address: Applied Physics Department, California Institute of Technology, Pasadena, CA 91125.
W J.D. Lipman
Affiliation:
Mechanical Engineering Department, Tufts University, Medford, MA 02155.
I.N. Miaoulis
Affiliation:
Mechanical Engineering Department, Tufts University, Medford, MA 02155.
C.K. Chenb
Affiliation:
Mechanical Engineering Department, Tufts University, Medford, MA 02155.
C.V. Thompson
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.
Get access

Abstract

We have developed a quantitative model, based on a two-dimensional finite difference enthalpy method, which accounts for the localized melting behavior of thin Si films on substrates. The model incorporates radiative and conductive heat flow components and takes account of the phase changes that occur during zone-melting recrystallization. Emphasis is placed on the effects resulting from the differences in reflectivity and emissivity between solid and liquid Si. The model provides quantitative information concerning the temperature profile of the Si film and the configuration of the solid-liquid interface. Results of the analysis indicate that there exist two distinct types of transition behavior: i) reflectivity-change dominated and ii) emissivity-change dominated. Partial melting and a nonplanar solid-liquid interface are characteristics of the reflectivity-change dominated behavior. The emissivity-change dominated behavior, on the other hand, can be characterized by explosive-like melting and a planar solid-liquid interface. The conditions and physical factors which give rise to these behaviors are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Materials Research Society Symposia Proceedings, Vol. 13, 23, (Elsevier Science, New York).Google Scholar
Materials Research Society Symposia Proceedings, Vol. 35, 53, 74,107, (Pittsburgh, PA).Google Scholar
Furukawa, S., Silicon-On-Insulators: Its Technology and Applications, (KTK Scientific Publishers, Tokyo), 1985.Google Scholar
Leamy, H. J., Chang, C. C., Baumgart, H., Lemons, R. A., and Cheng, J., Mater. Lett., 1, 33 (1982).Google Scholar
Geis, M. W., Smith, H. I., Silversmith, D. J., Mountain, R. W., and Thompson, C. V., J. Electrochem. Soc., 130, 1178 (1983).Google Scholar
Pfeiffer, L., Paine, S., Gilmer, G. H., vanSarloos, W., and West, K. W., Phys. Rev. Lett., 54, 1944 (1985).Google Scholar
Im, J. S., Thompson, C.V., and Tomita, H., in Materials Research Symposia Proceedings (Pittsburgh, PA, 1987), Vol. 74, p. 555.Google Scholar
Im, J. S., Tomita, H., and Thompson, C. V., Appl. Phys. Lett., 51, 685 (1987).Google Scholar
Grigoropoulos, C. P., Buckholz, R. H., and Domoto, G.A., J. Appl. Phys., 62, 474 (1987).Google Scholar
Im, J. S., Ph.D Dissertation, Massachusetts Institute of Technology, Cambridge, MA (1989).Google Scholar
Shamsundar, N. and Sparrow, E. M., Journal of Heat Transfer, 97, 333 (1975).Google Scholar
Kubota, Katsuhiko, Hunt, Charles E., and Fry, Jefferey, Appl. Phys. Lett., 46, 1153 (1985).Google Scholar
Miaoulis, Ioannis N. and Mikic, Bora B., J. Appl. Phys., 59, 1663 (1986).Google Scholar
Chang, C. Y., Fang, Y. K., Wu, B. S., and Chen, R. M., in Materials Research Symposia Proceedings (Noth Holland, New York, 1984), Vol. 23, p. 497.Google Scholar
Knapp, J. A., Thompson, L., and Collins, G. J., in Materials Research Symposia Extended Abstracts, (Pittsburgh, PA, 1988) EA-18, p. 165.Google Scholar
Chen, C. K. and Im, J. S., Appl. Phys. Lett., 55, 1238 (1989).Google Scholar
Chen, C. K., Geis, M. W., Tsaur, BY., Chapman, R. L., and Fan, John C. C., J. of electrochem. Soc., 131, 1707 (1984).Google Scholar
Bosch, M. A. and Lemons, R. A., Phys. Rev. Lett., 47, 1151 (1981).Google Scholar
Hawkins, W. G. and Biegelsen, D. K., Appl. Phys. Lett., 42, 358 (1983).Google Scholar
Lipman, J. D., Miaoulis, I. N., and Im, J. S., to be published in Materials Research Symposia Proceedings (1990).Google Scholar