Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-25T14:56:05.618Z Has data issue: false hasContentIssue false
  • English
  • Français

Nucleation Phenomena in Transitions from two to three phases, diffusion Couples, Phase Stability,the thin film formation of some silicides

Published online by Cambridge University Press:  22 February 2011

F. M. D»Heurle
F. M. D»Heurle*
Affiliation:
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598; Institutet for Mikrovagsteknik, S-100 44 Stockholm, Sweden
Get access

Extended abstract

Nucleation is generally understood to refer to the initial process of creating a new phase, for example, liquid water, from another phase, water vapor, as a result of a temperature excursion which carries the system through some critical temperature (in the case at hand, at normal atmospheric pressure, 100°C). The processes involved in such transformations have been the object of careful observations for a long time, at least two centuries; a very good historical perspective on this subject is found at the beginning of Ref. 1. The special case of metal vapors condensing on substrates in order to form thin films is considered in all texts dealing with thin film preparation [2]. The precipitation of a new phase, such as CuAl2, from a supersaturated solution (of copper in aluminum) has immense technological importance which motivates the attention being paid to nucleation phenomena in all metallurgical treatises [3,4].(A particularly thorough discussion is found in Ref. 5.) In all cases, nucleation phenomena are controlled by the necessity of creating an interface between the nucleated phase and the original matrix. The energy of the interface imposes special thermodynamic constraints on the evolution of the system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 3
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dunning, W.J., General and theoretical introduction, in Nucleation, Zettlemoyer, A.C. ed. (Marcel Dekker, New York, 1969), p. 3.Google Scholar
2. Neugebauer, C.A., Condensation, nucleation, and growth of thin films, in Handbook of Thin Film Technology, Maissel, L. and Glang, R. eds. (McGraw Hill, New York, 1970), Chapter 8.Google Scholar
3. Smallman, R.E., Modern physical metallurgy, (Butterworths, London, 1963).Google Scholar
4. Haasen, P., Physical metallurgy, (Cambridge University Press, Cambridge, 1978).Google Scholar
5. Aaronson, H.I. and Russel, K.C., Nucleation: mostly homogeneous and in solids, in Solid-Solid Phase Transformations, Aaronson, H.I., Laughlin, D.E., Sekerka, R.F., and Wayman, C.M., eds. (The Metallurgical Society of AIME, Warrendale, PA, 1982), p. 371.Google Scholar
6. Adda et, Y. Philbert, J., La Diffusion dans les Solides (Presses Universitaires de France, Paris, 1966), v. 1, p. 616.Google Scholar
7. Steinmetz, P., Dupre, B., and Roques, B., J. Less Common Met. 53, 43 (1977).Google Scholar
8. Muramatsu, Y., Roux, F., and Vignes, A., Trans. Jpn. Inst. Met. 16, 61 (1975).Google Scholar
9. Hutchins, G. and Shepela, A., Thin Solid Films 18, 343 (1973).Google Scholar
10. Ziegler, J., Mayer, J., Kircher, C., and Tu, K. N., J. Appl. Phys. 44, 3851 (1973).Google Scholar
11. Petersson, C.S., Baglin, J., Hammer, W., d’Heurle, F., Kuan, T.S., Odhomari, I., de Sousa Pires, J., and Tove, P., J. Appl. Phys. 50, 3357 (1979).Google Scholar
12. Petersson, C.S., Anderson, R., Baglin, J., Dempsey, J., Hammer, W., d’Heurle, F., and La Placa, S., J. Appl. Phys. 51, 373 (1970).Google Scholar
13. Anderson, R., Baglin, J., Dempsey, J., Hammer, W., d’Heurle, F., and Petersson, C.S., Appl. Phys. Lett. 35, 285 (1979).Google Scholar
14. Baglin, J., d’Heurle, F., and Petersson, C.S., Nucleation-controlled thin film interactions during silicide formation, in Thin Film Interfaces and Interactions, Baglin, J. and Poate, J. eds. (The Electrochemical Society, Princeton, 1980), p. 341.Google Scholar
15. Baglin, J., d’Heurle, F., and Petersson, C.S., Appl. Phys. Lett. 36, 594 (1980).Google Scholar
16. Thompson, R.D., Tsaur, B.Y., and Tu, K.N., Appl. Phys. Lett. 38, 535 (1981).Google Scholar
17. Petersson, C.S., Baglin, J., Dempsey, J., d’Heurle, F., and La Placa, S., J. Appl. Phys. 53, 4866 (1982).Google Scholar
18. Eizenberg, M. and Tu, K.N., J. Appl. Phys. 53, 6886 (1982).Google Scholar
19. Petersson, C.S. and d’Heurle, F., unpublished.Google Scholar
20. Tsaur, B.Y. and Nicolet, M.A., Appl. Phys. Lett. 35, 225 (1979).Google Scholar
21. Tsaur, B.Y. and Hung, L.S., Appl. Phys. Lett. 37, 922 (1980).Google Scholar
22. Nylund, A., Acta Chem. Scand. 20, 2381 (1966).Google Scholar
23. Barin, J., Knacke, O., and Kubachewski, O., Thermodynamic Properties of Inorganic Substances, (Springer Verlag, Berlin, 1973).Google Scholar
24. As Ref. 23, Supplement (1977).Google Scholar