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Nucleation of Tungsten on Titanium Nitride with Hydrogen Reduction of Tungsten Hexafluoride

  • D. Srinivas (a1), R. Foster (a1), S. Marcus (a1), R. Arora (a1) and H. Rebenne (a1)...

Abstract

In this work, a hydrogen (H2) reduction process has been developed which gives tungsten (W) nucleation on titanium nitride (TiN) adhesion layers with a very short incubation time, eliminating the need for a silane (SiH4reduced seed layer. The nucleation was found to be strongly dependent on the following factors: temperature of the substrate, total pressure in chamber, and gas introduction sequence into the reactor. Theenhanced nucleation rate has been explained based on two competing reactions: dissociation of H2, and formation of titanium subfluorides on the TiN surface.

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