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Nucleation and Growth of Quasicrystalline Silicon Thin Films on Glass Substrate Synthesized by Ceramics Hot Wire Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Abdul Rafik Middya ,
Jian-Jun Liang  and
Kartik Ghosh
Abdul Rafik Middya
Affiliation:
rafikmiddya@netzero.net, Syracuse University, Department of Physics, 501 1/2 Nottingham Road, Syracuse, New York, 13210, United States, (315) 469-5975, (315) 469-5975
Jian-Jun Liang
Affiliation:
jjliang@physics.syr.edu, Syracuse University, Department of Physics, 201 Physics Building, Syracuse, New York, 13244-1130, United States
Kartik Ghosh
Affiliation:
kartikghosh@missouristate.edu, Missouri State University, Physics, Astronomy and Materials Science, 901 S. National Avenue, Springfield, Missouri, 65804, United States
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Abstract

In this work, we report on nucleation and growth of silicon thin films on glass substrate with “five-fold” symmetry and “six-fold” symmetry by ceramics hot wire chemical vapor deposition. We observed “confinement of heat and photon” is a powerful approach in developing silicon thin films with novel structure, i.e. quasicrystalline silicon thin films on glass substrate. We found unambiguously that photons emitted from the hot filament influence the nucleation of nanocrystal silicon that produces new type of silicon thin films with “five-fold” symmetry and “six-fold” symmetry.

Keywords

Sichemical vapor deposition (CVD) (deposition)x-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A08-09
Copyright
Copyright © Materials Research Society 2006

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