Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-22T06:29:21.104Z Has data issue: false hasContentIssue false
  • English
  • Français

Nucleation and Growth of Oriented Diamond Films on Nickel Substrates

Published online by Cambridge University Press:  15 February 2011

P. C. Yang ,
W. Liu ,
D. A. Tucker ,
C. A. Wolden ,
R. F. Davis ,
J. T. Glass ,
J. T. Prater  and
Z. Sitar.
P. C. Yang
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC 27695-7919
W. Liu
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC 27695-7919
D. A. Tucker
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC 27695-7919
C. A. Wolden
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC 27695-7919
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC 27695-7919
J. T. Glass
Affiliation:
Kobe Steel USA, Inc. RTP, NC 27709.
J. T. Prater
Affiliation:
Army Research Office, RTP, NC 27709
Z. Sitar.
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC 27695-7919
Get access

Abstract

(100) and (111) oriented diamond films were grown on similarly oriented single crystal Ni substrates using a multi-step seeding and growth process. In-situ reflection monitoring revealed large surface reflectivity changes upon heating of the seeded substrate in H2. The reflectivity change was attributed to the surface melting and dissolution of the seeding particles. The presence of atomic hydrogen lowered the eutectic melting point of the Ni-C compound from 1325°C to about 1100°C. It appeared that the molten Ni-C-H surface layer suppressed graphite formation, which is normally observed in diamond growth on Ni, and promoted diamond nucleation. The oriented diamond films were also obtained using non-diamond carbon seeding. Based on experimental observation, a proposed model is described to explain the nucleation mechanism from the molten Ni-C-H surface layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 281
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Yang, P.C., Zhu, W., and Glass, J.T., J. Mater. Res. 8, 1773 (1993).Google Scholar
2. Yang, P.C., Zhu, W., Glass, J.T., U.S. Patent No. 5 298 286 (1994).Google Scholar
3. Wolter, S.D., Stoner, B.R., Glass, J.T., Ellis, P.J., Buhaenko, D.S., Jenkins, C.E., and Southworth, P., Appl. Phys. Lett. 62, 1215 (1993).Google Scholar
4. Belton, D.N. and Schmieg, S.J., J. Appl. Phys. 66, 4233 (1989).Google Scholar
5. Wentorf, R.H. Jr, Adv. Chem. Phys. 9, 365 (1965).Google Scholar
6. Sato, Y., Fujita, H., Ando, T., Tanaka, T., and Kamo, M., Philoscophical Transactions of the Royal Society of LondonA342, 225 (1993).Google Scholar
7. Yang, P.C., Kistenmacher, T.J., Tucker, D.A., Liu, W., Sivazlian, F.R., Bozeman, S.P., Stoner, B.R., Prater, J.T., Glass, J.T. and Davis, R.F., Applied Diamond Conference 1995, Gaithersburg, MD. P.329.Google Scholar
8. Kobashi, K. and Tachibana, T., Private communication.Google Scholar
9. Dewan, H.S., Ravichandran, D., Cheng, J.P., Drawl, W.R., Cherian, K.A. and Roy, R., Proc. of the Applied Diamond Conference 1995, Gaithersburg, MD, p.387.Google Scholar
10. Operation Manural of Polishing, Buehler.Google Scholar
11. Liu, W., Yang, P.C., Tucker, D.A., Wolden, C.A., Davis, R.F., Glass, J.T., Prater, J.T. and Sitar, Z., to be published in the proceeding of the MRS Spring, 1996, San Francisco, CA.Google Scholar