Nucleation and Growth in Vicinity of Growing Surface in Making Microcrystalline Silicon
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- DOI: https://doi.org/10.1557/PROC-192-481
- Published online by Cambridge University Press: 25 February 2011
Abstract
A close study was conducted on microcrystalline Silicon (μc-Si) prepared by PE-CVD (Plasma Enhanced CVD) from SiF4 with the assistance of atomic hydrogen. The atomic hydrogen played a major role in either making precursors, SiFnHm (n+m=3), by gas phase reactions with the fragments, SiFn (≤3), or constructing Si-network in the vicinity of the growing surface. Proper conditions of nucleation were markedly different from those of growth with respect to parameters, flow of atomic hydrogen and substrate temperature.
Copyright
COPYRIGHT: © Materials Research Society 1990
References
Nucleation and Growth in Vicinity of Growing Surface in Making Microcrystalline Silicon
-
- DOI: https://doi.org/10.1557/PROC-192-481
- Published online by Cambridge University Press: 25 February 2011