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N-Type Doping and Diffusion of Impurities in Diamond

Published online by Cambridge University Press:  26 February 2011

S. A. Kajihara ,
A. Antonelli  and
J. Bernholc
S. A. Kajihara
Affiliation:
North Carolina State University, Department of Physics, Raleigh, NC 27695-8202
A. Antonelli
Affiliation:
North Carolina State University, Department of Physics, Raleigh, NC 27695-8202
J. Bernholc
Affiliation:
North Carolina State University, Department of Physics, Raleigh, NC 27695-8202
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Abstract

First-principles calculations were used to study Li, Na, and P as prospective shallow donors in diamond. As expected, P prefers the substitutional site while Li and Na are interstitial donors. All three impurities were found to be shallow. However, their solubilities are very low, which makes them unsuitable for incorporation into diamond via in-diffusion. Instead, kinetic trapping during growth or ion implantation must be used. Interstitial impurities are particularly appropriate for ion implantation, since there is no need to replace host atoms. Considering the stability of the impurity at the dopant site, substitutional P is expected to diffuse by the vacancy mechanism and to have a high activation energy by analogy to self-diffusion. For Li and Na, the activation energies for interstitial channel diffusion are 0.85 and 1.6 eV, respectively. Li is thus a fast diffuser even at room temperature, while Na would remain stable up to moderate temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 315
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. For reviews see Lannoo, e.g. M. and Bourgoin, J., Point Defects in Semiconductors, vol.1, Springer, Berlin (1981); M. Jaros, Deep Levels in Semiconductors, A. Hilger Ltd., Bristol (1982); S.T. Pantelides, ed., Deep Centers in Semiconductors, Gordon and Breach, New York (1986); A. Zunger, Solid State Physics 36, 275 (1986).Google Scholar
2. For reviews, see Loubser, e.g. J. H. N. and van Wyk, J. A., Rep. Prog. Phys. 41, 1201 (1978); G. Davies, Rep. Prog. Phys., 44, 787 (1981).Google Scholar
3. V. S. Vavilov et al., Sov. Phys. Semicond. 13, 604 (1979); 13, 635 (1979).Google Scholar
4. Braunstein, G. and Kalish, R., Appl. Phys. Lett. 38, 416 (1981).Google Scholar
5. Vavilov, V. S., Radiation Effects 37, 229 (1978).Google Scholar
6. Bachelet, G. B., Baraff, G. A., and Schlüter, M., Phys. Rev. B 24, 4736 (1981).Google Scholar
7. Messmer, R. P. and Watkins, G. D., Phys. Rev. B 7, 2568 (1973).Google Scholar
8. Lannoo, M., Phys. Rev. B 25, 2987 (1982).Google Scholar
9. Bernholc, J., Antonelli, A., Sole, T. M. Del, Bar-Yam, Y., and Pantelides, S. T., Phys. Rev. Lett. 61, 2689 (1988) and references therein.Google Scholar
10. Car, R. and Parrinello, M., Phys. Rev. Lett. 55, 2471 (1985).Google Scholar
11. Hamann, D. R., Schlüter, M., and Chiang, C., Phys. Rev. Lett. 53, 1494 (1979).Google Scholar
12. Bachelet, G. B., Hamann, D. R., and Schlfüter, M., Phys. Rev. B 26, 4199 (1982)Google Scholar
13. Preliminary results presented at the Diamond Technology Initiative Symposium (1989) differed from the ones quoted here due to the use of the standard pseudopotential radii [12] in the earlier, exploratory work.Google Scholar
14. Kittel, C. and Kroemer, H., Thermal Physics, 2nd Edition, Freeman (1980); see also J. Tersoff, to be published.Google Scholar
15. Kaxiras, E. and Pandey, K. C., Phys. Rev. Lett. 61, 2693 (1988).Google Scholar
16. Phelps, A. W. and Koba, R., Proc. First Int. Symp. on Diamond and Diamond-Like Films, to be published (1989).Google Scholar
17. Smith, W. V., Sorokin, P. P., Gelles, I. L., and Lasher, G. J., Phys. Rev. 115, 1546 (1959).Google Scholar
18. Sandhu, G. S., Swanson, M. L., and Chu, W. K., Appl. Phys. Lett. 55, 1397 (1989).Google Scholar
19. Frank, W., Gösele, U., Mehrer, H., and Seeger, A., in Diffusion in Crystalline Solids, edited by Murch, G. E. and Nowick, A. S., (Academic Press, Inc, Orlando, Florida 1985) p. 64.0020Google Scholar