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Novel Stacked CMOS Process by Local Overgrowth

Published online by Cambridge University Press:  21 February 2011

René P. Zingg ,
B. Hüfflinger  and
G. W. Neudeck
René P. Zingg
Affiliation:
Institute for Microelectronics, Allmandring 30a, D-7000 Stuttgart 80, FRG; Tel: 0049-711-685-5777, FAX: 0049-711-685-5930
B. Hüfflinger
Affiliation:
Institute for Microelectronics, Allmandring 30a, D-7000 Stuttgart 80, FRG; Tel: 0049-711-685-5777, FAX: 0049-711-685-5930
G. W. Neudeck
Affiliation:
Purdue University, Dept. of El. Engineering, West Lafayette, IN 47907, USA
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Abstract

A six mask process that yields stacked CMOS circuits is presented. Transistors that were built in reverse order (i. e. the gate first, the gate dielectric second, and only then the channel region) exhibit comparable parameters as conventional devices. A novel device has been built whose current drive is three times that of FETs built in substrate material. The vertical stacking of complementary MOS transistors made it possible to build an inverter with symmetric switching characteristic within the area of a single transistor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 365
Copyright
Copyright © Materials Research Society 1990

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References

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