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A Novel Single Step Lapping and Chemo-Mechanical Polishing Scheme for Antimonide Based Semiconductors Using 1 µm Agglomerate-Free Alumina Slurry

  • P.S. Dutta (a1), R.J. Gutmann (a1), D. Keller (a2) and L. Sweet (a3)

Abstract

A novel approach for a single step lapping and chemical-mechanical polishing of antimonide-based III-V compounds using agglomerate-free alumina slurries is presented. Relatively high removal rates, minimal scratching, and low surface roughness have been obtained. The effects of slurry preparation cycle on the slurry properties and chemomechanical polishing results are discussed.

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1. Steigerwald, J.E., Murarka, S.P. and Gutmann, R.J., “Chemical-Mechanical Planarization of Microelectronic Materials,” J. Wiley (1997)10.1002/9783527617746
2. Li, S.H. and Miller, R.O., “Chemical Mechanical Polishing in Silicon Processing”, Semiconductors and Semimetals Series, Vol 63, Academic Press (2000)
3. Dutta, P.S. and Miller, T.R., Patent Application Filed by Rensselaer Polytechnic Institute, Troy, NY (October 1999)
4. Dutta, P.S. and Miller, T.R., J. Electronic Materials (in press)
5. Dutta, P.S., Miller, T.R., Charache, G.W. and Gutmann, R.J., J. Crystal Growth (in press)
6. Bachmann, K.J., Thiel, F.A. and Schreiber, H. Jr., Progress in Crystal Growth and Characterization 2, 171 (1979)10.1016/0146-3535(81)90030-7
7. Dutta, P.S., Ostrogorsky, A.G. and Gutmann, R.J., in: Proc. NREL Conf. On Thermophotovoltaic Generation of Electricity, Denver, CO, Ed. Coutts, T.J., Benner, J.P., Allman, C.S., AIP Conf. Proc. Vol. 460, New York, (1998) p. 227
8. Dutta, P.S. and Gutmann, R.J., Proc. of the Fifth International Conference on CMP-MIC, Santa Clara, CA (2000) p. 441
9. Li, S.H., Tredinnick, B. and Hoffmann, M., in Chapter 5 “Chemical Mechanical Polishing in Silicon Processing”, Semiconductors and Semimetals Series, Vol 63, Academic Press (2000) p. 146, 148

A Novel Single Step Lapping and Chemo-Mechanical Polishing Scheme for Antimonide Based Semiconductors Using 1 µm Agglomerate-Free Alumina Slurry

  • P.S. Dutta (a1), R.J. Gutmann (a1), D. Keller (a2) and L. Sweet (a3)

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