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Novel Multilayer Process for CuInSe2 Thin Film Formation by Rapid Thermal Processing

  • Chih-hung Chang (a1), Billy Stanbery (a1), Augusto Morrone (a2), Albert Davydov (a1) and Tim Anderson (a1)...

Abstract

CuInSe2 thin films have been synthesized from binary precursors by Rapid Thermal Processing (RTP) at a set-point temperature of 290°C for 70 s. With appropriate processing conditions no detrimental Cu2-xSe phase was detected in the CIS films. The novel binary precursor approach consisted of a bilayer structure of In-Se and Cu-Se compounds. This bilayer structure was deposited by migration enhanced physical vapor deposition at a low temperature (200°C) and the influence of deposition parameters on the precursor film composition was determined. The bilayer structure was then processed by RTP and characterized for constitution by X-ray diffraction and for composition by Wavelength Dispersive X-ray Spectroscopy.

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Novel Multilayer Process for CuInSe2 Thin Film Formation by Rapid Thermal Processing

  • Chih-hung Chang (a1), Billy Stanbery (a1), Augusto Morrone (a2), Albert Davydov (a1) and Tim Anderson (a1)...

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