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Novel Inorganic DC Lateral Thin Film Electroluminescent Devices Composed of ZnO Nanorods and ZnS Phosphor

Published online by Cambridge University Press:  01 February 2011

Tomomasa Satoh ,
Yuki Matsuzawa ,
Hiroaki Koishikawa  and
Takashi Hirate
Tomomasa Satoh
Affiliation:
satout02@kanagawa-u.ac.jp, Kanagawa University, Fuculty of Engineering, Yokohama, Japan
Yuki Matsuzawa
Affiliation:
r200870066zh@kanagawa-u.ac.jp, Kanagawa University, Faculty of Engineering, Yokohama, Japan
Hiroaki Koishikawa
Affiliation:
r200870066@kanagawa-u.ac.jp, Kanagawa University, Faculty of Engineering, Yokohama, Japan
Takashi Hirate
Affiliation:
firatech@kanagawa-i.ac.jp, Kanagawa University, Faculty of Engineering, Yokohama, Japan
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Abstract

A novel inorganic thin-film electroluminescence (TFEL) device exhibiting bright EL emission when driven by a low DC voltage is demonstrated. The DC-TFEL device is based on a composite layer in which aluminum-doped ZnO nanorods are vertically embedded in ZnS:Mn as an EL phosphor. The DC driving voltage is then applied laterally to the composite layer via two side electrodes set 3.5 mm apart. The aluminum-doped ZnO nanorods were synthesized on a glass substrate by low-pressure thermal chemical vapor deposition combined with laser ablation, and the composite layer was formed by electron-beam deposition of ZnS:Mn onto the ZnO nanorods. The thickness of the composite layer was about 160 nm. After electrical modification to breakdown a basal conduction ZnO path, the lateral DC-TFEL device exhibited bright EL emission without avalanche breakdown, achieving a luminance of 747 cd/m2 at 4200 V with a luminous efficiency of 9.2×10−3 lm/W.

Keywords

chemical vapor deposition (CVD) (deposition)optoelectroniclaser ablation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1144: Symposium LL – Nanowires–Systhesis, Properties, Assembly and Applications , 2008 , 1144-LL19-21
Copyright
Copyright © Materials Research Society 2009

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References

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