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Novel Glide Planes in Epitaxially Grown Semiconductors

  • M. Albrecht (a1), H. P. Strunk (a1), P. O. Hansson (a2) and E. Bauser (a2)


The accommodation of misfit stresses during heteroepitaxial growth of Ge0.85Si0.15 on Si(110) from In solution is studied by transmission electron microscopy. The regular misfit dislocation network forms at the interface and can be explained by glide of dislocations in a secondary a/2<110>{311} glide system. The occurrence of this secondary glide system is analyzed in terms of a mechanical equilibrium analysis that includes a frictional force due to a static Peierls barrier.



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