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Novel Epoxy Siloxane Polymer as Low-K Dielectric

  • Pei-I Wang (a1), Jasbir S. Juneja (a1), Shyam Murarka (a1), Toh –Ming Lu (a1), Ram Ghoshal (a2) and Rajat Ghoshal (a2)...

Abstract

This paper introduces a low-k dielectric material, a novel epoxy siloxane polymer, made by Polyset Co. Inc, which has promising properties. The polymer was spin-deposited, and thickness and optical properties were measured using variable-angle spectroscopic ellipsometry (VASE). Fourier transform infrared (FTIR) spectra of as deposited and cured polymers showed that the polymer is fully cured at 165 °C. The low curing temperature of the polymer lowers stress in back-end-of-line (BEOL) stack and thus improves the reliability. The polymer is thermally stable up to 400 °C. The polymer has Young's modulus of ∼5 GPa and hardness of greater than 0.4 GPa. After multiple stress cycles up to 300 °C, the residual stress in the polymer at room temperature is less than 60 Mpa. The polymer has good adhesion with semiconductor and dielectrics such as Si, SiC, and SiO2, metals such as Al, Cu, Co, and W, and barrier materials such as TaN. The bulk dielectric constant of the polymer is 2.4 - 2.7. The leakage current density in the polymer at the applied electrical field of 1 MV/cm is in 10−9 A/cm2 range and the breakdown field of the polymer is ranging from 5 to 7 MV/cm. The polymer when subjected to bias-temperature stress (BTS) conditions of 150 °C and 0.5 MV/cm shows no C-V shift for up to 100 min indicating that the polymer resists Copper diffusion. The current density under stress conditions of 150 °C and 0.5 MV/cm was less than 10−9 A/cm2 for up to 7 hrs.

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