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Normally-off GaN MOSFETs on Silicon Substrates with High-temperature Operation

  • Hiroshi Kambayashi (a1), Yuki Niiyama (a2), Takehiko Nomura (a3), Masayuki Iwami (a4), yoshihiro Satoh (a5) and Sadahiro Kato (a6)...

Abstract

We have demonstrated enhancement-mode n-channel gallium nitride (GaN) MOSFETs on Si (111) substrates with high-temperature operation up to 300 °C. The GaN MOSFETs have good normally-off operation with the threshold voltages of +2.7 V. The MOSFET exhibits good output characteristics from room temperature to 300 °C. The leakage current at 300°C is less than 100 pA/mm at the drain-to-source voltage of 0.1 V. The on-state resistance of MOSFET at 300°C is about 1.5 times as high as that at room temperature. These results indicate that GaN MOSFET is suitable for high-temperature operation compared with AlGaN/GaN HFET.

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References

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Keywords

Normally-off GaN MOSFETs on Silicon Substrates with High-temperature Operation

  • Hiroshi Kambayashi (a1), Yuki Niiyama (a2), Takehiko Nomura (a3), Masayuki Iwami (a4), yoshihiro Satoh (a5) and Sadahiro Kato (a6)...

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