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Non-Polar GaN/AlN Superlattices on A-plane AlN (500nm) Buffer Layers Grown by RF-MBE

Published online by Cambridge University Press:  01 February 2011

Takayuki Morita ,
Akihiko Kikuchi  and
Katsumi Kishino
Takayuki Morita
Affiliation:
Department of Electrical and Electronics Engineering, Sophia University 7–1, Kioi-cho, Chiyoda-ku, Tokyo, 102–8554, Japan
Akihiko Kikuchi
Affiliation:
Department of Electrical and Electronics Engineering, Sophia University 7–1, Kioi-cho, Chiyoda-ku, Tokyo, 102–8554, Japan
Katsumi Kishino
Affiliation:
Department of Electrical and Electronics Engineering, Sophia University 7–1, Kioi-cho, Chiyoda-ku, Tokyo, 102–8554, Japan
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Abstract

The growth conditions of A-plane AlN and GaN epitaxial layers by radio-frequency plasma assisted molecular beam epitaxy on R-plane sapphire substrates were investigated. The growth temperature and V/III supply ratio dependency on structural quality and surface roughness was described. The optimum V/III ratio for A-plane GaN and AlN layers was shifted to nitrogen rich side compared to the C-plane layers. A-plane GaN/AlN superlattices (SLs) were also grown on R-plane sapphire substrates. The X-ray diffraction peaks from a primary and a 1st satellite were observed. From a comparison of low temperature photoluminescence peak wavelength between A-plane and C-plane SLs, the built-in electrostatic field originated from spontaneous and piezoelectric polarization is negligible for A-plane SLs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E11.43
Copyright
Copyright © Materials Research Society 2005

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References

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