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Nonlinear Optical Properties of Ultranarrow P-Type Gaas Quantum Wells

  • Z. Xu (a1), J. V. Vandyshev (a1), P. M. Fauchet (a1), G. W. Wicks (a2), M. J. Shaw (a3), M. Jaros (a3), B. Richman (a4) and C. Rella (a4)...


We have performed second harmonic generation (SHG) measurements in the 3-5 μm region on p-type stepped quantum wells (QWs) using the tunable, high peak power pulses generated by a free electron laser. The samples were grown by MBE on (100) GaAs wafers. The asymmetric QWs are made of m monolayers of GaAs and n monolayers of Al0.5Ga0.5As sandwiched between AlAs barriers. The QWs were characterized by x-ray diffraction and room temperature photoluminescence (PL). We measured an order of magnitude enhancement of the second order susceptibility over bulk GaAs. In contrast to n-type QWs, the dominant component is the χ(2) xyz component. The results are explained by a full pseudopotential band structure calculation of χ(2).



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