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Nonlinear Optical Mapping of Cubic Silicon Carbide Micron Areas In Epitaxial Films of Hexagonal Polytypes

Published online by Cambridge University Press:  10 February 2011

G. Lüpke ,
C. Meyer ,
O. Busch ,
E. Stein von Kamicuski ,
A. Göz  and
H. Kurz
G. Lüpke
Affiliation:
Institute of Semiconductor Electronics H, Rheinisch- West fälische Technische Hochschule, D-52056 Aachen, Germany
C. Meyer
Affiliation:
Institute of Semiconductor Electronics H, Rheinisch- West fälische Technische Hochschule, D-52056 Aachen, Germany
O. Busch
Affiliation:
Institute of Semiconductor Electronics H, Rheinisch- West fälische Technische Hochschule, D-52056 Aachen, Germany
E. Stein von Kamicuski
Affiliation:
Institute of Semiconductor Electronics H, Rheinisch- West fälische Technische Hochschule, D-52056 Aachen, Germany
A. Göz
Affiliation:
Institute of Semiconductor Electronics H, Rheinisch- West fälische Technische Hochschule, D-52056 Aachen, Germany
H. Kurz
Affiliation:
Institute of Semiconductor Electronics H, Rheinisch- West fälische Technische Hochschule, D-52056 Aachen, Germany
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Abstract

Various silicon carbide polytypes, such as 4H-, 6H- and 3C-SiC are clearly distinguished by the magnitude and rotational anisotropy of their optical second-harmonic (SH) response. The large dynamic range of the SH response of more than two orders of magnitude between these polytypes allows a fast and non-invasive mapping of 3C-SiC micron areas in 4H - and 6H-SiC epilayers. 3C-Microcrystallites of different oricutations are identified from SH rotational anisotropy scans.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 729
Copyright
Copyright © Materials Research Society 1997

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References

[1] Verma, A. R. and Krishina, P., Polymorphism and Polytypism in Crystals, New York: Wiley, 1966.Google Scholar
[2] Din, S. and Suleman, M., Mater. Lett. 17, 241 (1993).Google Scholar
[3] Davis, R. F., Kelner, G., Shur, M., Ialhiour, J. W., and.. Edimond, A., Proc. of the IEEE 79, 677 (1991).Google Scholar
[4] Shibara, K., Saito, T., Nishino, S., and Matsunami, H., IEEE Electr. Dev. Lett. EDL–7. 692 (1986).Google Scholar
[5] Knippenberg, W. F., Philips Res. Rep. 18, 161 (1963).Google Scholar
[6] Shibara, K., Nislhino, S., and Matsunami, H., Journal of Crystal Growth 78, 538 (1986).Google Scholar
[7] Wang, Y. C. and Davis, R.F.,.Journal of Electronic Materials 20, 869 (1991).Google Scholar
[8] Powell, J. A. et al., Appl. Phys. Let.. 59, 333 (1991).Google Scholar
[9] Dudlea, M. et al.,.J. Phys. D: Appl. Phys. 28, A56 (1995).Google Scholar
[10] Meyer, C., Lüpke, G., Kamienski, E. Stein von, Gölz, A.. and Kurz, H., Apph. Phys. Lett. 69, 2243 (1996).Google Scholar
[11] Shen, Y. R., Nature 337, 519 (1989).Google Scholar
[12] Heinz, T. F., Second-order nonlinear optical effects at surfaces and interfaces, in Non-linear Surface Elect ronagnetic Phenomena, edited by Ponath, H.-E. and Stegeman, G., chapter 5, pages 353–416, Elscvier Science Publishers B.V., 1991.Google Scholar
[13] Meyer, C. et al., J. Vac. Sci. Technol. B 14, 3107 (1996).Google Scholar
[14] Amzallag, J. et a.l., Appl. Phys. Lett. 66, 982 (1995).Google Scholar
[15] Bottomley, D. J., Lüpke, G., Legerwood, M. L., Zhoii, X. Q., and Driel, H. M. van, Appl. Phys. Lett. 63, 2324 (1993).Google Scholar
[16] Galeckas, A., Petrauskas, M., Wahab, Q., and Willander, M., Nucl. Instr. and Meth. in Phys. Res. B 65, 357 (1992).Google Scholar
[17] Bottomley, D. J., Lüpke, G., Mihaychuk, J. G., and Driel, H. M. van, J. Appl. Phys. 74, 6072 (1993).Google Scholar
[18] Flörsheimer, M., Looser, H., Küpfer, M., and Güter, P., Thin Solid Films 244, 1001 (1994).Google Scholar