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Nonlinear Carrier Relaxation in a Single GaAs Self-organized Quantum Dot

Published online by Cambridge University Press:  11 February 2011

T. Kuroda ,
S. Sanguinetti ,
F. Minami ,
M. Gurioli ,
K. Watanabe  and
N. Koguchi
T. Kuroda
Affiliation:
Department of Physics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152–8551, JAPAN
S. Sanguinetti
Affiliation:
I.N.F.M. and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 53, 20125 Milano, ITALY Nanomaterials Laboratory, National Institute for Material Science, Tsukuba 305–0047, JAPAN
F. Minami
Affiliation:
Department of Physics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152–8551, JAPAN
M. Gurioli
Affiliation:
I.N.F.M. and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 53, 20125 Milano, ITALY
K. Watanabe
Affiliation:
Nanomaterials Laboratory, National Institute for Material Science, Tsukuba 305–0047, JAPAN
N. Koguchi
Affiliation:
Nanomaterials Laboratory, National Institute for Material Science, Tsukuba 305–0047, JAPAN
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Abstract

We resolved a photoemission signal from a single self-organized GaAs/Al0.3Ga0.7As quantum dot (QD) with picosecond time resolution. The emission spectra consisting of the multiexciton structures are observed to depend on the delay time and the excitation intensity. Through the analysis we can determine the carrier relaxation time as a function of population of photoinjected carriers. Enhancement of the intra-dot carrier relaxation is demonstrated to be due to the carrier-carrier scattering inside a single QD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , E10.3
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

Kuroda, T., Sanguinetti, S., Gurioli, M., Watanabe, K., Minami, F., and Koguchi, N., Phys. Rev. B 66, 121302(R) (2002).Google Scholar
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