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Nonequilibrium Crystal Growth During Pulsed Laser Annealing*
Published online by Cambridge University Press: 15 February 2011
Abstract
Solidification of the melted region during pulsed laser annealing occurs under conditions that are far from equilibrium at the interface. Studies of laser annealing of ion implanted silicon can be used to provide a wealth of information on nonequilibrium crystal growth phenomena.
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- Copyright © Materials Research Society 1982
Footnotes
Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.
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