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Nonequilibrium Carrier Dynamics Studied in Er, O-Codoped GaAs by Pump-Probe Reflection Technique

  • Yasufumi Fujiwara (a1), Kazuhiko Nakamura (a1), Shoichi Takemoto (a1), Yoshikazu Terai (a1), Masato Suzuki (a2), Atsushi Koizumi (a3), Yoshikazu Takeda (a3) and Masayoshi Tonouchi (a2)...

Abstract

Carrier dynamics in Er,O-codoped GaAs (GaAs:Er,O) have been systematically investigated by means of a pump and probe reflection technique with a mode-locked Ti:sapphire laser. In GaAs:Er,O, it has been found that the codoping produces a single atom configuration (Er-20 configuration) as an Er atom located at the Ga sublattice with two adjacent O atoms together with two As atoms, resulting in extremely strong Er luminescence. Time-resolved reflectivity of GaAs:Er,O exhibited an abrupt increase in amplitude, followed by a steep decrease to negative in less than 1 ps and then a gradual increase in approximately 100 ps. The steep decrease is due to bandgap renormalization. The gradual increase in reflectivity depended strongly on Er concentration, indicating that a trap induced by Er and O codoping plays an important role in dynamics of nonequilibrium carriers in GaAs:Er,O.

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[1] For example, Fujiwara, Y., Ofuchi, Y. H., Tabuchi, M. and Takeda, Y.: InP and Related Compounds -Materials, Applications and Devices-, Optoelectronic Properties of Semiconductors and Superlattices, Vol. 9, edited by Manasreh, M. O. (Gordon and Breach Science Pub., The Netherlands, 2000) p. 251.
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[3] Koizumi, A., Fujiwara, Y., Urakami, A., Inoue, K., Yoshikane, T. and Takeda, Y.: Appl. Phys. Lett. Vol. 83 (2003), p. 4521.
[4] Koizumi, A., Fujiwara, Y., Inoue, K., Yoshikane, T., Urakami, A. and Takeda, Y.: Physica B Vol. 340-342 (2003), p. 309.
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Nonequilibrium Carrier Dynamics Studied in Er, O-Codoped GaAs by Pump-Probe Reflection Technique

  • Yasufumi Fujiwara (a1), Kazuhiko Nakamura (a1), Shoichi Takemoto (a1), Yoshikazu Terai (a1), Masato Suzuki (a2), Atsushi Koizumi (a3), Yoshikazu Takeda (a3) and Masayoshi Tonouchi (a2)...

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