Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-24T10:08:10.172Z Has data issue: false hasContentIssue false
  • English
  • Français

Nondestructive Characterization of ZnSe/GaAs Heterostructure Using Transverse Acoustoelectric Voltage Spectroscopy

Published online by Cambridge University Press:  21 February 2011

K. J. Han ,
A. Abbate ,
I. B. Bhat ,
S. Akram  and
P. Das
K. J. Han
Affiliation:
Electrical, Computer and Systems Engineering Department Rensselaer Polytechnic Institute, Troy, NY 12180-3590
A. Abbate
Affiliation:
Benet Labs, SMCAR-CCB-RA, Watervliet Arsenal, Watervliet, NY 12189
I. B. Bhat
Affiliation:
Electrical, Computer and Systems Engineering Department Rensselaer Polytechnic Institute, Troy, NY 12180-3590
S. Akram
Affiliation:
Electrical, Computer and Systems Engineering Department Rensselaer Polytechnic Institute, Troy, NY 12180-3590
P. Das
Affiliation:
Electrical, Computer and Systems Engineering Department Rensselaer Polytechnic Institute, Troy, NY 12180-3590
Get access

Abstract

The electrical and optical properties of the heterostructure interface between high resistivity ZnSe and the semi-insulating GaAs substrate have been investigated using Transverse Acoustoelectric Voltage (TAV) spectroscopy. From the TAV spectra and the relative change of the TAV amplitude (ΔTAV/TAV), we have found the carrier type and concentration of ZnSe as well as the energy levels of various trap states at the heterostructure interface. The spectral behavior of the ΔTAV/TAV curves varied for samples of different ZnSe epilayer thickness. From the measurements, the surface recombination velocities (SRV's) were calculated. For the pseudomorphic ZnSe films on GaAs, a reduction in the SRV's was measured. As the thickness of the ZnSe film was increased, the various ΔTAV/TAV indicated presence of a large number of interface states due to the introduction of misfit dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 75
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Olego, D.J., Appl. Phys. Lett. 51, 18, 1422 (1987).Google Scholar
2. Ghandhi, S.K., Tyagi, S. and Venkatasubramanian, R., Appl. Phys. Lett. 53, 14, 1308 (1988).Google Scholar
3. Fuoss, P.H., Kisker, D.W., Renand, G., Tokuda, K.L., Brennan, S. and Kahn, J.L., Phys. Rev. Lett. 63, 2389 (1989).Google Scholar
4. Davari, B., Tabib-Azar, M., Liu, T. and Das, P., Solid State Electron 29, 75 (1986).Google Scholar
5. Palma, F., de Cesare, G., Abbate, A. and Das, P., IEEE Trans. of Ultrason., Ferroel. And Freq. Control. 38, 5, 503 (1991).Google Scholar
6. Milnes, A.G., Deep Impurities in Semiconductors ( New York Wiley, New York, 1973), p. 141.Google Scholar
7. Han, K. J., Abbate, A., Bhat, I. B. and Das, P., Appl. Phys. Lett. 60, 7, 862 (1992).Google Scholar
8. Kowalczyk, S.P., Kraut, E.A., Waldrop, J.R. and Grant, R.W., J. Vac. Sci. Technol. 21, 482 (1982).Google Scholar
9. Pollard, W., J. of Appl. Phys. 69, 5, 3154 (1991).Google Scholar
10. Olego, D.J. and Cammack, D., J. of Cryst. Growth. 101, 546 (1990).Google Scholar
11. Mathews, J. W. and Blakeslee, A. E., J. of Cryst. Growth. 27, 118 (1974)Google Scholar