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Non-Contact Temperature Measurement with Infrared Interferometry

Published online by Cambridge University Press:  22 February 2011

Steven C. H. Hung ,
Haike K. Dong  and
Charles W. Tu
Steven C. H. Hung
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407
Haike K. Dong
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407
Charles W. Tu
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407
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Abstract

We have successfully utilized the temperature dependence of the refractive indices of various substrates (GaAs and InP) in detecting their temperature variations. The detectionwas accomplished by injecting a beam of HeNe laser (1.15 μm) toward a double-sidepolished substrate. An interference pattern developed among the reflected laser beams, and the actual temperature increment/decrement could be deduced from the interference maxima and minima. The method was first calibrated inside a diffusion furnace from room temperature up to 200ºC, and the detection resolution was found to reach as high as ±0.7ºC. The same measurement setup was later used on the temperature calibration of a substrate heater in a molecular beam epitaxy (MBE) growth chamber, and was finally used to detect surface temperature change during Ar+ laser assisted metalorganic MBE (MOMBE) growth. Because a direct contact is unnecessary and only the relative signal intensity is needed, this low-cost method can be applied to any otherexperiments in a fairly straightforward manner.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 35
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] Gronet, C. M., Sturm, J. C., Willians, K.E., Gibbons, J. F., and Wilson, S. D., Appl. Phy. Lett. 48, 1012 (1986).Google Scholar
[2] Heimann, W. and Mester, U., Inst. Physics. Conf. No. 26, 219 (1975).Google Scholar
[3] Warnke, C. F., in Temperature: Its Measurement and Control in Industry, ed. Plumb, H.H. (Instrument Society of America, Pittsburgh), Vol. 4 (1975).Google Scholar
[4] Schooley, James F., Therm ometry, Chemical Rubber, Cleveland, OH (1986).Google Scholar
[51 Donnelly, V. M. and McCaulley, J. A.. J.Vac. Sci. Technol. A 8, 84 (1990).Google Scholar
[6] Sankur, H. and Gunning, W.. Appl. Phys. Lett. 56, 2651 (1990).Google Scholar
[7] Morozova, E. A., Shafeev, G. A. and Wautelet, M.. Meas. Sci. Technol. 3, 302 (1992).Google Scholar
[8] Saenger, Katherine L. and Gupta, Julie. Applied Optics, Vol. 30, No. 10, 1221 (1991).Google Scholar
[9] Sturm, James C.. Reaves, Casper M.. IEEE Trans. on Electron Devices, Vol. 39, No. 1, 81 (1992).Google Scholar
[10] Allen, F.G., Silicon Molecular Beam Epitaxy, pp.3–15, ed. Beam, J. C., Electrochemical Society, Pennington, N. J. (1985)Google Scholar
[11] Myers, Glen E., Analytical Methods in Conduction Heat Transfer, pp.1–33.Google Scholar
[12] Donnelly, V. M., J. Vac. Sci. Technol. A 11, 2393 (1993).Google Scholar
[13] Donnelly, V. M., Appl. Phys. Lett. 63, 1396 (1993).Google Scholar