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Non-Contact Characterization of Recombination Processes in 4H-SiC

Published online by Cambridge University Press:  15 March 2011

K. Matocha ,
T.P. Chow  and
R.J. Gutmann
K. Matocha
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing Rensselaer Polytechnic Institute, Troy, NY, USA
T.P. Chow
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing Rensselaer Polytechnic Institute, Troy, NY, USA
R.J. Gutmann
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing Rensselaer Polytechnic Institute, Troy, NY, USA
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Abstract

Carrier decay transients in 4H-SiC n-type and p-type epilayers have been charac-terized using a non-destructive, non-contact microwave photoconductivity technique. Decay transients show a two-stage exponential decay with first decay constants as high as 400 ns in 10 νm p-type epilayers. The second decay constant increases with temperature and is dominated by interface recombination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T4.4.1
Copyright
Copyright © Materials Research Society 2000

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References

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