Hostname: page-component-788cddb947-55tpx Total loading time: 0 Render date: 2024-10-19T19:27:46.356Z Has data issue: false hasContentIssue false
  • English
  • Français

Nonconformal Al Via-Hole Filling by Electron Beam Evaporation

Published online by Cambridge University Press:  25 February 2011

C.-C. Cho
C.-C. Cho*
Affiliation:
Central Research Laboratories, Texas Instruments, P.O. Box 655936, MS 147, Dallas, Texas 75265.
Get access

Abstract

Using electron beam evaporation, we have deposited Al on patterned SiO2 films grown on various Si(100)-based substrates and characterized the Al films by scanning electron microscopy, x-ray diffraction and transmission electron microscopy. The growth mode of Al in the via holes of the SiO2 films is found to depend on the base materials of the holes. For via holes based on Si(100) and TiSi2, Al fills the holes nonconformally, showing little Al on the side walls. The nonconformal growth of Al is useful for submicron via-hole filling because it prevents void formation caused by shadowing effect. In contrast, for holes of AlCu bases, Al grows conformally. For the Al grown in the via holes of Si(100) bases, single crystal Al with Al(110)//Si(100) epitaxial relation can be grown in the holes at a substrate temperature of 300°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 691
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kikuta, K., Kikkawa, T. and Aoki, M., Proc. 8th International IEEE VMIC Conf. 163 (1991).Google Scholar
2. Mukai, R., Sasaki, N. and Nakano, M., IEEE Electro. Dev. Lett. EDL–8. 76 (1987).Google Scholar
3. Baseman, R. J., J. Vac. Sci. Technol. B8, 84 (1990).Google Scholar
4. Inoue, M., Hashizume, K. and Tsuchikawa, H., J. Vac. Sci. Technol. A6, 1636 (1988).Google Scholar
5. Chen, F. S., Lin, Y. S., Dixit, G. A., Sundaresam, R., Wei, C. C. and Liou, F. T., IEEE. IEDMTech. Dig. 51 (1990).Google Scholar
6. Gittleman, B., Bai, P., Yang, G. -R., Lu, T. -M. and Hu, C. -K., J. Vac. Sci. Technol. A5, 1514(1990).Google Scholar
7. Mei, S. -N., Lu, T. -M. and Robert, S., IEEE Electro. Dev. Lett. EDL–8, 503 (1987).CrossRefGoogle Scholar
8. Yamada, I. and Takagi, T., IEEE Trans. Electro. Dev. ED–34, 1018 (1987).Google Scholar
9. Cho, C. -C. and Liu, H. Y., Mat. Res. Soc. Proc, 221, 87 (1991).Google Scholar
10. Shingubara, S. and Nakasaki, Y., Appl. Phys. Lett., 58, 42 (1991).Google Scholar
11. Igna'ev, A. S., Mokerov, V. G., Petrova, A. G., Rybin, A. V. and Manzha, N. M., Sov. Tech. Phys. Lett., 8, 174 (1982).Google Scholar
12. Yamada, I., Inokawa, H. and Takagi, T., J. Appl. Phys., 56, 2746 (1984).Google Scholar
13. Cho, C. -C. and Liu, H. Y., to be published.Google Scholar