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Non-Alloyed Ohmic Contacts to n-GaAs Using Epitaxial Ge Layers

Published online by Cambridge University Press:  26 February 2011

T. Sawada ,
W. X. Chen ,
E. D. Marshall ,
K. L. Kavanagh ,
T. F. Kuech ,
C. S. Pai  and
S. S. Lau
T. Sawada
Affiliation:
University of California at San Diego, La Mia, CA 92093
W. X. Chen
Affiliation:
University of California at San Diego, La Mia, CA 92093
E. D. Marshall
Affiliation:
University of California at San Diego, La Mia, CA 92093
K. L. Kavanagh
Affiliation:
Cornell University, Ithaca, N. Y. 14853
T. F. Kuech
Affiliation:
IBM Watson Research Center, Yorktown Heights, N.Y. 10598
C. S. Pai
Affiliation:
University of California at San Diego, La Mia, CA 92093
S. S. Lau
Affiliation:
University of California at San Diego, La Mia, CA 92093
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Abstract

Alloyed ohmic contacts (i.e. Au-Ge-Ni) to n-GaAs lead to non-planar interfaces which are unsuitable for devices with shallow junctions and small dimensions. In this study, the fabrication of non-alloyed ohmic contacts (via solid state reactions) is investigated. A layered structure involving the solid phase epitaxy of Ge using a transport medium (PdGe) is shown to produce low (1 — 5 × 10∼6Ω cm2) and reproducible values of contact resistivity. The resultant interface is shown to be abrupt by cross-sectional transmission electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 409
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

[1] Breslau, N., Gunn, J. B., and Staples, J. L., Solid-State Electron. 10, 381 (1967).Google Scholar
[2] Kuan, T. S., Batson, P. E., Jackson, T. N., Rupprecht, H. and Wilkie, E. L., J. Appl. Phys. 54, 6952 (1983).Google Scholar
[3] Braslau, N., J. Vac. Sci. Technol. 19, 803 (1981).Google Scholar
[4] Woodall, J. M., Freeouf, J. L., Pettit, G. D., Jackson, T. and Kirchner, P., J. Vac. Sci. Technol. 19, 636 (1981).Google Scholar
[5] Stall, R., Wood, C. E. C., Board, K., Dandekar, N., Eastman, L. F., and Devlin, J., J. Appl. Phys. 52, 4062 (1981).Google Scholar
[6] Sze, S. M., Physics of Semiconductor Devices (Wiley, New York, 1981), p. 291.Google Scholar
[7] Kirchner, P. D., Jackson, T. N., Pettit, G. D. and Woodall, J. M., Appl. Phys. Lett. 47, 26 (1985).Google Scholar
[8] Anderson, W. T. Jr, Christou, A. and Davy, J. E., IEEE J. Solid State Circuits SC–13, 430 (1978).Google Scholar
[9] Sinha, A. K., Smith, T. E. and Levenstein, M. J., IEEE Trans. Electron. Devices ED–22, 218 (1975).Google Scholar
[10] Grinolds, H. H. and Robinson, G. Y., Solid State Electron. 23, 973 (1980).Google Scholar
[11] Tiwari, S., Kuan, T-S. and Tierney, E., International Electron Device Meeting Technical Digest, 1983. p. 115.Google Scholar
[12] Marshall, E. D., Chen, W. X., Wu, C. S., Lau, S. S. and Kuech, T. F., Appl. Phys. Lett., 47 298 (1985).Google Scholar
[13] Ballingall, J. M., Wood, C. E. C. and Eastman, L. F., J. Vac. Sci. Technol. B1, 675 (1983).Google Scholar
[14] Chiaradia, P., Katnani, A. D., Sang, H. W. Jr, and Bauer, R. S., Phys. Rev. Lett. 52, 1246 (1984).Google Scholar
[15] Marshall, E. D., Wu, C. S., Pai, C. S., Scott, D. M. and Lau, S. S., Mat. Res. Soc. Symp. Proc, Vol. 47, 1985, p. 161.Google Scholar
[16] Berger, H. H., Solid State Electron. 15, 145 (1972).Google Scholar
[17] The actual values of contact separation were measured with a calibrated optical microscope reticle for every contact pattern. This led to greater accuracy in the determination of the specific contact resistivity.Google Scholar
[18] Zur, A. and McGill, T. C., J. Vac. Sci. Technol. B2, 440 (1984).Google Scholar
[19] Kuan, T. S., Freeouf, J. L., Batson, P. E. and Wilkie, E. L., J. Appl. Phys. 58 1519 (1985).Google Scholar
[20] Palmstrom, C. J. and Galvin, G. J., Appl. Phys. Lett. 47 815 (1985).Google Scholar