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Noise properties of a single ZnO nanowire device

  • Choi Soo Han (a1), Dong Wook Kim (a2), Do Young Jang (a3), Hyun Jin Ji (a4), Sang Woo Kim (a5), So Jung Park (a6), Seung Eon Moon (a7) and Gyu Tae Kim (a8)...

Abstract

The low frequency noise of individual ZnO nanowire (NW) field effect transistors (FETs) exposed to air is systematically characterized. The measured noise power spectrum shows a classical 1/f type. The noise amplitude is independent of source-drain current and inversely proportional to gate voltage. The extracted Hooge's constant of ZnO NW is found to be 6.52×10−3. In addition, the low frequency noise of ZnO NW according to NW resistance and contact property are investigated. The noise amplitude is proportional to the square of ZnO NW resistance. If a sample shows a nonlinear current-voltage (I-V) characteristic due to a poor electrical contact, the noise power spectrum is proportional to the third power of current instead of the square of current.

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