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Nitrogen Plasma Pretreatment of Sapphire Substrates for the GaN Buffer Growth by Remote Plasma Enhanced MOCVD

  • Min Hong Kim (a1), Cheolsoo Sone (a1), Jae Hyung Yi (a1), Soun Ok Heur (a2) and Euijoon Yoon (a1)...

Abstract

Low-temperature GaN buffer layers with smooth surfaces and high crystallinity could be prepared by a remote plasma enhanced metalorganic vapor deposition after the pretreatment of substrates with rf nitrogen plasma. Smooth AIN thin layer was formed on the (0001) sapphire substrate by the nitrogen plasma pretreatment for an hour. The AIN layer provided the nucleation sites for the subsequent buffer layer growth, thus highly preferred (0001) GaN buffer layers could be grown on the pretreated substrate. Formation of the AIN layer on sapphire and the surface smoothness were affected by pretreatment parameters such as exposure time, temperature, and rf power.

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Nitrogen Plasma Pretreatment of Sapphire Substrates for the GaN Buffer Growth by Remote Plasma Enhanced MOCVD

  • Min Hong Kim (a1), Cheolsoo Sone (a1), Jae Hyung Yi (a1), Soun Ok Heur (a2) and Euijoon Yoon (a1)...

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