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Nitrogen Location on ZnSe Surface During MBE Growth

Published online by Cambridge University Press:  22 February 2011

Minoru Kubo ,
Yoichi Sasai  and
Tadasi Narusawa
Minoru Kubo
Affiliation:
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd., Moriguchi Osaka, JAPAN
Yoichi Sasai
Affiliation:
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd., Moriguchi Osaka, JAPAN
Tadasi Narusawa
Affiliation:
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd., Moriguchi Osaka, JAPAN
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Abstract

We first present the nitrogen location on radical nitrogen doped ZnSe-MBE surface studied by ISARS(Ion Scattering And Recoiling Spectrometry). In the recoiling nitrogen measurements of heavy doped ZnSe:N surface, a two-peak structure is observed corresponding to two recoil processes, i.e., direct recoil (DR) and surface recoil(SR). DR events occur due to the singlecollision recoiling from Se site nitrogen. On the other hand, SR events occur due to the nitrogen recoiling scattered by second layers and is highly sensitive to the nitrogen location on ZnSe:N surface during MBE growth. The experimental results and calculation suggest that the optimum doped nitrogen atoms locate in the substitutional Se sites but excess nitrogen atoms locate in the interstitial sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 447
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[11 Haase, M. A., Qiu, J., DePuydt, J. M. and Cheng, H., Appl. Phys. Lett. 59, 1272(1991).Google Scholar
[2] Okuyama, H., Miyajima, T., Morinaga, Y., Hiei, F., Ozawa, M. and Akimoto, K., Electron. Lett. 28, 1798(1992).Google Scholar
[3] Salokatve, A., Jeon, H., Ding, J., Hovinen, M., Nurmikko, A.V., Grillo, D. C., He, Li, Han, J., Fan, Y., Ringle, M., Gunshor, R. L., Hua, G. C. and Otsuka, N., Electron. Lett. 29, 2192(1993).Google Scholar
[4] Ohkawa, K., Ueno, A. and Mituyu, T., Jpn. J. Appl. Phys. 30, 3873(1991).Google Scholar
[5] Kubo, M. and Narusawa, T., J. Vac. sci. Technol. A7, 697(1990).Google Scholar
[6] Kubo, M. and Narusawa, T., Appl. Phys. Lett. 59, 3557(1991).Google Scholar
[7] Grizzi, O., Shi, M., Bu, H., Rabalais, J. W., Rye, R. R. and Nordlander, P., Phys. Rev. Lett. 63, 1408(1989).Google Scholar
[8] Shoji, F., Kasihara, K., Sumitomo, K. and Oura, K., Surface Science 242, 422(1991).Google Scholar
[9] Suzuki, M., Uenoyama, T. and Yanase, A., Extended Abstracts of 1993 Int. Conf. SSDM, 74(1993).Google Scholar
[10] Chadi, D. J. and Troullier, N., Physica B, 185, 128(1993).Google Scholar