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Nitrogen Implantation and Diffusion in Silicon

Published online by Cambridge University Press:  10 February 2011

Lahir Shaik Adam ,
Mark E. Law ,
Omer Dokumaci ,
Yaser Haddara ,
Cheruvu Murthy ,
Heemyong Park ,
Suri Hegde ,
Dureseti Chidambarrao ,
Steve Mollis  and
Tony Domenicucci
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Lahir Shaik Adam
Affiliation:
Software Analysis and Advanced Materials Processing (SWAMP) Center, Department of Electrical Engineering, University of Florida, Gainesville, FL 32611
Mark E. Law
Affiliation:
Software Analysis and Advanced Materials Processing (SWAMP) Center, Department of Electrical Engineering, University of Florida, Gainesville, FL 32611
Omer Dokumaci
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Yaser Haddara
Affiliation:
Software Analysis and Advanced Materials Processing (SWAMP) Center, Department of Electrical Engineering, University of Florida, Gainesville, FL 32611
Cheruvu Murthy
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Heemyong Park
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Suri Hegde
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Dureseti Chidambarrao
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Steve Mollis
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Tony Domenicucci
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Chester Dziobkowski
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Kevin Jones
Affiliation:
Software Analysis and Advanced Materials Processing (SWAMP) Center, Department of Electrical Engineering, University of Florida, Gainesville, FL 32611
Philip Wong
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
Ralph Young
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
R. Srinivasan
Affiliation:
Semiconductor Research and Development Center, IBM Corporation, East Fishkill, NY 12533
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Abstract

Nitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 277
Copyright
Copyright © Materials Research Society 1999

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References

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