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Nitrogen Defect Concentration in Chemical Vapor Deposited Homoepitaxial Diamond at High TemperatureS

Published online by Cambridge University Press:  10 February 2011

Chih-Shiue Yan  and
Yogesh K. Vohra
Chih-Shiue Yan
Affiliation:
Dept. of Physics, Univ. of Alabama at Birmingham (UAB), Birmingham, A.L. 35294-1170
Yogesh K. Vohra
Affiliation:
Dept. of Physics, Univ. of Alabama at Birmingham (UAB), Birmingham, A.L. 35294-1170
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Abstract

Homoepitaxial diamond films were grown on polished single crystal {100} oriented natural type Ila diamond circular substrates using high density microwave plasma chemical vapor deposition (MPCVD). Twelve homoepitaxial diamond films were grown under a variety of substrate temperatures (1000 C-2000 C), methane concentration (1% - 3% in hydrogen gas) and processing pressure(60 - 150 torr). Electron paramagnetic resonance (EPR) studies demonstrate that nitrogen is largely incorporated as singly substitutional impurity (P1-center) and nitrogen's concentration is in the range of 10 -100 parts per million. Nitrogen's concentration also shows a systematic decrease with increasing substrate temperatures. The temperature variation of nitrogen at high temperatures is discussed within a model where single substitutional nitrogen aggregates to form nitrogen defects which are not EPR active.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 555: Symposium OO – Properties and Processing of Vapor-Deposited Coatings , 1998 , 239
Copyright
Copyright © Materials Research Society 1999

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