Hostname: page-component-7bb8b95d7b-cx56b Total loading time: 0 Render date: 2024-09-22T22:54:49.526Z Has data issue: false hasContentIssue false
  • English
  • Français

Nitrogen Defect Concentration in Chemical Vapor Deposited Homoepitaxial Diamond at High TemperatureS

Published online by Cambridge University Press:  10 February 2011

Chih-Shiue Yan  and
Yogesh K. Vohra
Chih-Shiue Yan
Affiliation:
Dept. of Physics, Univ. of Alabama at Birmingham (UAB), Birmingham, A.L. 35294-1170
Yogesh K. Vohra
Affiliation:
Dept. of Physics, Univ. of Alabama at Birmingham (UAB), Birmingham, A.L. 35294-1170
Get access

Abstract

Homoepitaxial diamond films were grown on polished single crystal {100} oriented natural type Ila diamond circular substrates using high density microwave plasma chemical vapor deposition (MPCVD). Twelve homoepitaxial diamond films were grown under a variety of substrate temperatures (1000 C-2000 C), methane concentration (1% - 3% in hydrogen gas) and processing pressure(60 - 150 torr). Electron paramagnetic resonance (EPR) studies demonstrate that nitrogen is largely incorporated as singly substitutional impurity (P1-center) and nitrogen's concentration is in the range of 10 -100 parts per million. Nitrogen's concentration also shows a systematic decrease with increasing substrate temperatures. The temperature variation of nitrogen at high temperatures is discussed within a model where single substitutional nitrogen aggregates to form nitrogen defects which are not EPR active.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 555: Symposium OO – Properties and Processing of Vapor-Deposited Coatings , 1998 , 239
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Smith, W. V., Sorokin, P. P., Gelles, I. L., Lasher, G. J., Phys. Rev. 115, 1546 (1959)Google Scholar
2. Cadedge, S.A., Vohra, Y. K., Yan, C., Tohver, H.T., MRS 441, p.635, Thin Films-Structure and Morphology Symposium held December 2–6, 1996, Boston, Massachusetts.Google Scholar
3. Clausing, R. E., Heatherly, L., Horton, L.L., Specht, E. D., Begun, G. M., and Wang, Z. l., Diamond Relat. Mater. 1, 411 (1992)Google Scholar
4. Spear, K. E., J. Am. Ceram. Sci. 72, 171 (1989)Google Scholar
5. Yan, Chih-Shiue, Ph.D thesis, University of Alabama at Birmingham (to be published)Google Scholar
6. Vohra, Yogesh K., Israel, Andrew, and Catledge, Shane A., Appl. Phys. Lett. 71 (3), 21 July 1997 Google Scholar
7. McCauley, Thomas S., Israel, Andrew, and Vohra, Yogesh K., Tarvin, John T., Rev. Sci. Instrum. 68 (4), April 1997 Google Scholar
8. Chrenko, R. M., Tuft, R. E. and Strong, H. M. (1977). Nature (london) 270, 141–144.Google Scholar
9. Davies, G, (1976). J. phys. C9, L537–L542Google Scholar