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Nitrided Gate Dielectrics and Charge-to-Breakdown Test

Published online by Cambridge University Press:  10 February 2011

S. Dimitrijev ,
P. Tanner ,
H. B. Harrison  and
D. Sweatman
S. Dimitrijev
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, Qld. 4111, Australia, sima@me.gu.edu.au
P. Tanner
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, Qld. 4111, Australia, sima@me.gu.edu.au
H. B. Harrison
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, Qld. 4111, Australia, sima@me.gu.edu.au
D. Sweatman
Affiliation:
School of Microelectronic Engineering, Griffith University, Nathan, Qld. 4111, Australia, sima@me.gu.edu.au
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Abstract

In this paper, the applicability of the charge-to-breakdown test for characterisation and comparison of differently grown ultra-thin gate dielectric films is considered. It is shown that the charge-to-breakdown parameter cannot be reliably used, because it is related to the electrons tunneling through the film, and not to the mechanism of positive charge accumulation which leads to time-dependent breakdown. It is found that the constant-voltage stress provides a consistent set of stress field vs time-to-breakdown data. Nitrided gate dielectrics show improved breakdown characteristics, compared to standard silicon-dioxide films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 239
Copyright
Copyright © Materials Research Society 1996

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References

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