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Nitridation of Hafnium Silicate Thin Films

Published online by Cambridge University Press:  28 July 2011

Hood Chatham ,
Yoshi Senzaki ,
Jeff Bailey  and
Wesley Nieveen
Hood Chatham
Affiliation:
Aviza Technology, Inc., 440 Kings Village Road, Scotts Valley, CA 95066, U.S.A.
Yoshi Senzaki
Affiliation:
Aviza Technology, Inc., 440 Kings Village Road, Scotts Valley, CA 95066, U.S.A.
Jeff Bailey
Affiliation:
Aviza Technology, Inc., 440 Kings Village Road, Scotts Valley, CA 95066, U.S.A.
Wesley Nieveen
Affiliation:
Charles Evans and Associates/Evans Analytical Group, 810 Kifer Road, Sunnyvale, CA, 94086, U.S.A.
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Abstract

We discuss the nitridation of ALD-deposited hafnium silicate films by exposure to atomic nitrogen generated in a remote nitrogen plasma. Nitrogen concentration [N] as measured by X-ray photoelectron spectroscopy (XPS) is determined as a function of the nitridation temperature and other process conditions. Nitrogen concentrations up to 13.7 atomic % were achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D7.5
Copyright
Copyright © Materials Research Society 2004

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References

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