No CrossRef data available.
Article contents
Nitridation of Hafnium Silicate Thin Films
Published online by Cambridge University Press: 28 July 2011
Abstract
We discuss the nitridation of ALD-deposited hafnium silicate films by exposure to atomic nitrogen generated in a remote nitrogen plasma. Nitrogen concentration [N] as measured by X-ray photoelectron spectroscopy (XPS) is determined as a function of the nitridation temperature and other process conditions. Nitrogen concentrations up to 13.7 atomic % were achieved.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2004