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NiSi Nanowires and Nanobridges Formed by Metal-Induced Growth

Published online by Cambridge University Press:  26 February 2011

Joondong Kim ,
Dongho Lee  and
Wayne A Anderson
Joondong Kim
Affiliation:
jk74@buffalo.edu, University at Buffalo, State University of New York, Electrical Engineering, Bonner 207, Buffalo, NY, 14228, United States, (716)645-3115 Ext. 1233
Dongho Lee
Affiliation:
dlee7@buffalo.edu, University at Buffalo, State University of New York, Electrical Engineering, United States
Wayne A Anderson
Affiliation:
waanders@eng.buffalo.edu, University at Buffalo, State University of New York, Electrical Engineering, United States
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Abstract

Nickel monosilicide (NiSi) nanowires (NWs) were fabricated by metal-induced growth at 575 °C. The solid-state reaction of Ni and Si provides linear grown NWs. The parallel grown NW forms a nanobridge (NB) across a trench, patterned with a simple optical lithography and metal lift-off method. The Ni pads gave a good Ohmic contact without affecting the I-V transport characteristics through a NB. The metallic NB, 2.73 µm in length and 50 nm in diameter, gave a low resistance of 148 . The self-assembled nanobridge can be applied to form nanocontacts at relatively low temperatures. The MIG NB is a promising 1 dimensional nanoscale building block to satisfy the need of ‘self and direct’ assembled ‘bottom-up’ fabrication concepts.

Keywords

nanoscaleself-assemblyelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 901: Symposium R – Assembly at the Nanoscale – Toward Functional Nanostructured Materials , 2005 , 0901-Ra22-03-Rb22-03
Copyright
Copyright © Materials Research Society 2006

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