Skip to main content Accessibility help

NiSi formation in the Ni(Ti) /SiO 2 /Si System

  • R.T.P. Lee (a1), D.Z. Chi (a1) and S.J. Chua (a1)


A NiSi silicide process employing a Ni(Ti) alloy has been investigated. It was experimentally demonstrated that a small amount of Ti in Ni could overcome the reaction-inhibiting effect of an interfacial oxide layer on Si. Ti in the deposited Nil film reacts with the interfacial oxide, yielding an altered oxide layer, which acts as a Ni-permeable diffusion membrane during silicidation. Good diode characteristics were obtained from p+/n silicided Ni(Ti)-diodes with an initial interfacial oxide. It is believed that the ability to form silicide effectively in the presence of a native oxide will greatly relieve constraints on processing conditions and significantly enhance manufacturing yield.



Hide All
[1] Ohuguro, T., Nakamura, S., Koike, M., Morimoto, T. and Nishiyama, A., “Analysis of resistance behaviour in Ti and Ni salicide polysilicon films”, IEEE Trans Electron Devices, vol 41, p.2305, 1994
[2] Deng, F., Johnson, R. A., Asbeck, P.M., Lau, S. S., Dubbleday, W. B., Hsiaoand, T. Woo, J., “Salicidation process using NiSi and its device application”, J. Appl. Phys, vol 81, p8047, 1994
[3] Mukai, R., Ozawa, S., and Yagi, H., “Compatibility of NiSi in the self-aligned silicide process for deep submicrometer devices”, vol 270, p567, 1995
[4] Ohguro, T., Nakamura, S., Morifuiji, E., Ono, M., Yoshitomi, T., Saito, M., Momose, H.S., and Iwai, H., “Nitrogen-doped nickel monosilicide technique for deep submicron CMOS salicide”, IEDM Technical Digest, p. 453, 1995
[5] Kittl, Jorge A., “Salicides and alternative technologies:part 2”, Solid State Technology, august, p55, 1999
[6] Lee, P.S., Mangelinck, D., Pey, K.L., Ding, J., Dai, J.Y.. Ho, C.S. and See, A., “On theNi-Si phase transformation with/without native oxide”, Microelectronic Engineering, vol 51-52, p.583, 2000
[7] Ishiaka, Akitoshi and Shiraki, Yasuhiro, “Low temperature surface cleaning of silicon and its application to silicon MBE”, Electrochemical Science and Technology, vol 133 No 4, p666671, 1986
[8] Tung, R.T., Gibson, J.M. and Poate, J.M., “Formation of ultrathin single-crystal silicide films on Si: surface and interfacial stabilization of Si-NiSi2 epitaxial structures”, Physical Review Letters, vol 50, p.429432, 1983

Related content

Powered by UNSILO

NiSi formation in the Ni(Ti) /SiO 2 /Si System

  • R.T.P. Lee (a1), D.Z. Chi (a1) and S.J. Chua (a1)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.