Hostname: page-component-7bb8b95d7b-dtkg6 Total loading time: 0 Render date: 2024-09-19T22:35:49.348Z Has data issue: false hasContentIssue false
  • English
  • Français

Next Generation of Thin Film Transistors Based on Zinc Oxide

Published online by Cambridge University Press:  17 March 2011

E. Fortunato ,
P. Barquinha ,
A. Pimentel ,
A. Gonçalves ,
L. Pereira ,
A. Marques  and
R. Martins
E. Fortunato
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal
P. Barquinha
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal
A. Pimentel
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal
A. Gonçalves
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal
L. Pereira
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal
A. Marques
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal
R. Martins
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516 Caparica, Portugal
Get access

Abstract

We report high performance ZnO thin film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a field effect mobility of 28 cm2/Vs, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high field-effect mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , E1.9
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Masuda, S., Kitamura, K., Okumura, Y., Miyatake, S., Tabata, H., Kawai, T., J. Appl. Phys. 93, 1624 (2003).Google Scholar
2. Hoffman, R. L., Norris, B. J., Wager, J. F., Appl. Phys. Lett. 82, 733. (2003).Google Scholar
3. Carcia, P. F., McLean, R. S., Reilly, M. H., Nunes, G., Appl. Phys. Lett. 82, 1117 (2003).Google Scholar
4. Nishii, J., Hossain, F.M., Takagi, S., Aita, T., Saikusa, K., Ohmaki, Y., Ohkubo, I., Ohtomo, A., Fukumura, T., Matsukura, F., Ohno, Y., Koinuma, H., Ohno, H., Kawasaki, M., Jpn. J. Appl. Phys. 42, L347 (2003).Google Scholar
5. Bae, H. S., Yoon, J. H., Kim, J. H., Im, S.. Appl. Phys. Lett. 83, 5313 (2003).Google Scholar
6. Norris, B. J., Anderson, J., Wager, J. F., Keszler, D. A., J. Phys. D: Appl. Phys. 36, L105 (2003).Google Scholar
7. Nomura, K., Ohta, H., Ueda, K., Kamiya, T., Hirano, M., Hosono, H., Science 300, 1269 (2003).Google Scholar
8. Assunção, V., Fortunato, E., Marques, A., Gonçalves, A., Ferreira, I., Àguas, H., Martins, R. Thin Solid Films 442, 102 (2003).Google Scholar
9. Bender, M., Fortunato, E., Nunes, P., Ferreira, I., Marques, A., Martins, R., Katsarakis, N., Cimalla, V. and Kiriakidis, G., Jpn. J. Appl. Phys. 42, L435 (2003).Google Scholar
10. Coutts, T.J., Young, D.L Li. MRS Bull. 25, 58 (2000).Google Scholar