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A New, Ultrafast Technique for Mapping Dislocation Density in Large-area, Single-crystal and Multicrystalline Si Wafers

Published online by Cambridge University Press:  31 January 2011

Bhushan Sopori
Affiliation:
Bhushan.Sopori@scholarone.com, National Renewable Energy Lab, Golden, Colorado, United States
Przemyslaw Rupnowski
Affiliation:
peter.rupnowski@nrel.gov, National Renewable Energy Lab, Golden, Colorado, United States
Vinay Budhraja
Affiliation:
vinay.budhraja@nrel.gov, National Renewable Energy Lab., Golden, Colorado, United States
Matthew Albert
Affiliation:
Matthew.albert@gtsolar.com, GT Solar, Merrimack, New Hampshire, United States
Chandra Khattak
Affiliation:
Chandra.Khattak@gtsolar.com, GT Solar, Merrimack, New Hampshire, United States
Mike Seacrist
Affiliation:
mseacrist@memc.com, MEMC Electronic Materials, St. Peters, Missouri, United States
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Abstract

We describe a new technique for rapidly measuring average dislocation density and for mapping dislocation distribution of crystalline and multicrystalline silicon wafers. The wafer is etched in Sopori etch and the light scattered by dislocation etch pits is used to statistically count the pits. We also describe a unique arrangement for wafer illumination and measurement of scattered light that allows each dislocation map to be generated very rapidly—typically in less than 20 ms. The measurement system is now commercially available and has capabilities for measuring many other physical parameters of wafers and solar cells

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

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