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A New Two-Step Plasma-Assisted Surface Cleaningoxidation and Film-Deposition Process Sequence for The Formation of Si(100)/SiO2 Interfaces with Low Densities of Interfacial Traps

Published online by Cambridge University Press:  25 February 2011

Y. Ma ,
T. Yasuda ,
S. Habermehl ,
S.S. He ,
D.J. Stephens  and
G. Lucovsky
Y. Ma
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
T. Yasuda
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
S. Habermehl
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
S.S. He
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
D.J. Stephens
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

Device quality SiO2 films have been deposited by Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD). The substrate surface cleaning, both ex-situ and insitu, influence the density of trapping states at the Si/SiO2 interface. Pre-deposition exposure to plasma-generated atomic-H significantly reduces hydrocarbon and 0 contamination, but damages the Si surface leading to high interface trap densities (Dit) in the Si band-gap. Pre-deposition exposure to plasma generated O-atoms, removes the residual hydrocarbons, and oxidizes the Si substrate while maintaining an atomically smooth interface. Metal Oxide Semiconductor (MOS) structure fabricated by RPECVD have midgap Dit values of ∼1-3×1010cm−2eV−1 for 0-plasma cleaned surface. Final rinse after RCA cleaning in HF solutions with different pH values affects surface morphology; however surface roughening by atomic-H is always the determinant contributor to high values of Dit.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 69
Copyright
Copyright © Materials Research Society 1992

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References

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